Art

J-GLOBAL ID：202002210795251940   Reference number：20A0496557

Epitaxial Lifted-Off Thin Film GaInP/GaAs/GaInNAsSb Lattice-Matched Triple Junction Solar Cells

エピタキシャル浮上オフ薄膜GaInP/GaAs/GaInAsSb格子整合三重接合太陽電池【JST・京大機械翻訳】

Author (6)： Miyashita Naoya (The University of Tokyo,Research Center for Advanced Science and Technology (RCAST),Tokyo,Japan,153-8904) ,  Ahsan Nazmul (The University of Tokyo,Research Center for Advanced Science and Technology (RCAST),Tokyo,Japan,153-8904) ,  Okada Yoshitaka (The University of Tokyo,Research Center for Advanced Science and Technology (RCAST),Tokyo,Japan,153-8904) ,  Tatavarti Rao (MicroLink Devices, Inc.,Niles,IL,USA,60714) ,  Wibowo Andree (MicroLink Devices, Inc.,Niles,IL,USA,60714) ,  Pan Noren (MicroLink Devices, Inc.,Niles,IL,USA,60714)
Material： IEEE Conference Proceedings  (IEEE Conf Proc)
Volume： 2019  Issue： PVSC  Page： 1502-1505  Publication year： 2019 
JST Material Number： W2441A  Document type： Proceedings
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： In this work, we performed epi...

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Thesaurus term： *gallium arsenide ,  electric current ,  MOCVD ,  *solar cell ,  MBE growth ,  bonding and joining ,  device structure ,  *epitaxy ,  *thin film ,  *lattice match ,  refloatation ,  optical absorption ,  epitaxial lift-off ,  *gallium indium phosphide
Semi thesaurus term： *InGaP , 【Automatic Indexing@JST】

JST classification (2)： Mobile communication  (ND08030H) ,  Graphic and image processing in general  (JE04010I)

Terms in the title (8)： エピタキシャル ,  浮上 ,  オフ ,  薄膜 ,  GaInP ,  GaAs ,  格子整合 ,  太陽電池