Art
J-GLOBAL ID:202002213210930738   Reference number:20A0783782

Defects controlled doping and electrical transport in TiS2 single crystals

TIS_2単結晶における欠陥制御ドーピングと電気輸送【JST・京大機械翻訳】
Author (16):
Material:
Volume: 116  Issue: 12  Page: 121901-121901-5  Publication year: 2020 
JST Material Number: H0613A  ISSN: 0003-6951  CODEN: APPLAB  Document type: Article
Article type: 原著論文  Country of issue: United States (USA)  Language: ENGLISH (EN)
Abstract/Point:
Abstract/Point
Japanese summary of the article(about several hundred characters).
All summary is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
TiS2 has been inten...
   To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=20A0783782&from=J-GLOBAL&jstjournalNo=H0613A") }}
Thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.

JST classification (3):
JST classification
Category name(code) classified by JST.
Electric conduction in crystalline semiconductors  ,  Semiconductor thin films  ,  Magnetic properties of inorganic compounds 
Terms in the title (4):
Terms in the title
Keywords automatically extracted from the title.

Return to Previous Page