Art

J-GLOBAL ID：202002215234197477   Reference number：20A2525181

Direct observation of contact potential distributions of wafer-bonded p-GaAs/n-GaN and p-GaAs/n-Si by scanning Kelvin probe force microscopy

走査Kelvinプローブ力顕微鏡によるウエハボンディングp-GaAs/n-GaNおよびp-GaAs/n-Siの接触電位分布の直接観察

Author (14)： Xing Zhiwei (School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China) ,  Xing Zhiwei (Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, People’s Republic of China) ,  Yang Wenxian (Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, People’s Republic of China) ,  Zhao Yukun (Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, People’s Republic of China) ,  Long Junhua (School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China) ,  Long Junhua (Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, People’s Republic of China) ,  Li Xuefei (Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, People’s Republic of China) ,  Dai Pan (HuZhou University, HuZhou, Zhejiang 313000, People’s Republic of China) ,  Lai Junqi (School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China) ,  Lai Junqi (Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, People’s Republic of China) ,  Chen Qi (Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, People’s Republic of China) ,  Bian Lifeng (Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, People’s Republic of China) ,  Uchida Shiro (Chiba Institute of Technology, Narashino, Chiba 275-0016, Japan) ,  Lu Shulong (Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, People’s Republic of China)
Material： Japanese Journal of Applied Physics  (JJAP)
Volume： 59  Issue： 11  Page： 115502 (6pp)  Publication year： Nov. 2020 
JST Material Number： G0520B  ISSN： 0021-4922  CODEN： JJAPB6  Document type： Article
Article type： 短報  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Thesaurus term： *contact potential difference ,  gallium arsenide ,  gallium nitride ,  *force microscope ,  wafer ,  electric potential distribution ,  *PN junction ,  silicon ,  ohmic contact ,  electrical conductivity ,  electrical property ,  surface level ,  boundary layer ,  heterojunction
Semi thesaurus term： *Kelvin probe force microscope ,  wafer bonding ,  turn on voltage ,  interface layer

JST classification (1)： Semiconductor-semiconductor contacts with Gr.13-15 element compounds  (BM03082Y)

Terms in the title (8)： 走査 ,  Kelvinプローブ力顕微鏡 ,  ウエハボンディング ,  GaAs ,  GaN ,  Si ,  接触電位 ,  分布