Art

J-GLOBAL ID：202002215940423331   Reference number：20A0750115

Area-selective Cu Film Growth on TiN and SiO₂ by Supercritical Fluid Deposition

超臨界流体堆積によるTiNとSiO₂上での範囲選択性Cu膜成長

Author (5)： Usami Naoto (Department of Electrical Engineering and Information Systems (EEIS), The University of Tokyo) ,  Ota Etsuko (VLSI Design and Education Center (VDEC), The University of Tokyo) ,  Higo Akio (VLSI Design and Education Center (VDEC), The University of Tokyo) ,  Momose Takeshi (Department of Materials Engineering, The University of Tokyo) ,  Mita Yoshio (Department of Electrical Engineering and Information Systems (EEIS), The University of Tokyo)
Material： 電気学会論文誌 E  (IEEJ Transactions on Sensors and Micromachines)
Volume： 140  Issue： 1  Page： 31-36(J-STAGE)  Publication year： 2020 
JST Material Number： L3098A  ISSN： 1341-8939  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： metallic thin film ,  proximity effect ,  titanium compound ,  nitride ,  silicon dioxide ,  selectivity ,  *thin film growth ,  *supercritical fluid ,  supercritical carbon dioxide ,  supercritical gas ,  hydrogen ,  reducing agent ,  wafer ,  backing(filling) ,  microscopy ,  Auger electron spectroscopy ,  characterization
Semi thesaurus term： *copper film ,  titanium nitride ,  範囲選択性 ,  silicon substrate ,  Microscopy, Atomic Force

Author keywords (4)： Supercritical fluid deposition ,  Area-selective deposition ,  Copper ,  Proximity effect

JST classification (2)： Manufacturing technology of solid-state devices  (NC03030V) ,  Metallic thin films  (BK14030T)

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Terms in the title (7)： 超臨界流体 ,  堆積 ,  TiN ,  SiO2 ,  選択性 ,  Cu ,  膜成長