Art

J-GLOBAL ID：202002218166211596   Reference number：20A0283920

Intrinsic resistance peaks in AB-stacked multilayer graphene with odd number of layers

奇数の層数を持つAB積層多層グラフェンにおける固有抵抗ピーク【JST・京大機械翻訳】

Author (8)： Nakasuga Tomoaki (Graduate School of Advanced Sciences of Matter (AdSM), Hiroshima University, Higashi-Hiroshima 739-8530, Japan) ,  Hirahara Taiki (Graduate School of Advanced Sciences of Matter (AdSM), Hiroshima University, Higashi-Hiroshima 739-8530, Japan) ,  Horii Kota (Graduate School of Advanced Sciences of Matter (AdSM), Hiroshima University, Higashi-Hiroshima 739-8530, Japan) ,  Ebisuoka Ryoya (Graduate School of Advanced Sciences of Matter (AdSM), Hiroshima University, Higashi-Hiroshima 739-8530, Japan) ,  Tajima Shingo (Graduate School of Advanced Sciences of Matter (AdSM), Hiroshima University, Higashi-Hiroshima 739-8530, Japan) ,  Watanabe Kenji (National Institute for Materials Sciences (NIMS), Tsukuba 305-0044, Japan) ,  Taniguchi Takashi (National Institute for Materials Sciences (NIMS), Tsukuba 305-0044, Japan) ,  Yagi Ryuta (Graduate School of Advanced Sciences of Matter (AdSM), Hiroshima University, Higashi-Hiroshima 739-8530, Japan)
Material： Physical Review. B  (Physical Review. B. Covering Condensed Matter and Materials Physics)
Volume： 101  Issue： 3  Page： 035419  Publication year： 2020 
JST Material Number： D0746A  ISSN： 2469-9950  CODEN： PRBMDO  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： We studied the band structure ...

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Thesaurus term： band structure ,  monomolecular layer ,  *graphene ,  electric field ,  magnetic flux density ,  carrier density ,  dispersion relation ,  energy gap ,  *electrical resistivity ,  even number ,  *odd number ,  bilayer ,  *multilayer graphene

JST classification (1)： Electronic structure of crystalline semiconductors  (BM02060N)

Terms in the title (4)： 奇数 ,  層 ,  多層グラフェン ,  固有抵抗