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J-GLOBAL ID：202002219373549277   Reference number：20A0742723

A DFT study of healing the N vacancy in h-BN monolayer by NO molecules

NO分子によるh-BN単分子層におけるN空孔の治癒のDFT研究【JST・京大機械翻訳】

Author (4)： Cui Hao (College of Artificial Intelligence, Southwest University, Chongqing, China) ,  Cui Hao (State Key Laboratory of Power Transmission Equipment and System Security and New Technology, Chongqing University, Chongqing, China) ,  Liu Tun (Traffic and Transportation Engineering, Central South University, Changsha, China) ,  Jia Pengfei (College of Artificial Intelligence, Southwest University, Chongqing, China)
Material： Applied Physics. A. Materials Science & Processing  (Applied Physics. A. Solids and Surfaces)
Volume： 126  Issue： 4  Page： 292  Publication year： 2020 
JST Material Number： D0256C  ISSN： 0947-8396  CODEN： APHYCC  Document type： Article
Article type： 短報  Country of issue： Germany, Federal Republic of (DEU)  Language： ENGLISH (EN)

Abstract/Point： Abstract: During the synthesis...

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Thesaurus term： *monomolecular layer ,  similarity ,  nanomaterial ,  density functional method ,  two dimension ,  disproportionation
Semi thesaurus term： 物理化学的性質 ,  *六方晶窒化ホウ素 , 【Automatic Indexing@JST】

Author keywords (4)： N vacancy ,  h-BN monolayer ,  NO disproportionation ,  DFT

JST classification (5)： Thin films of organic compounds  (BK14070L) ,  Magnetic materials  (NA04040H) ,  Semiconductor thin films  (BK14040E) ,  Lattice defects in other inorganic compounds  (BK12050B) ,  Carbon and its compounds  (YB02060D)

Terms in the title (8)： NO ,  分子 ,  h-BN ,  単分子層 ,  空孔 ,  治癒 ,  DFT ,  研究