Art

J-GLOBAL ID：202002219457001789   Reference number：20A0496402

High-Efficiency InAs-InGaAs Quantum Dash Solar Cells Developed Through Current Constraint Engineering

電流制約工学により開発した高効率InAs-InGaAs量子ダッシュ太陽電池【JST・京大機械翻訳】

Author (4)： Okada Yoshitaka (The University of Tokyo,Research Center for Advanced Science and Technology (RCAST),Tokyo,Japan,153-8904) ,  Miyashita Naoya (The University of Tokyo,Research Center for Advanced Science and Technology (RCAST),Tokyo,Japan,153-8904) ,  Oteki Yusuke (The University of Tokyo,Dept. of Electrical Engineering and Information Systems,Tokyo,Japan,113-8656) ,  Shoji Yasushi (National Institute of Advanced Industrial Science and Technology (AIST),Ibaraki,Japan,305-8568)
Material： IEEE Conference Proceedings  (IEEE Conf Proc)
Volume： 2019  Issue： PVSC  Page： 0765-0767  Publication year： 2019 
JST Material Number： W2441A  Document type： Proceedings
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： In principle, quantum-dot inte...

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Thesaurus term： *solar cell ,  heat management ,  *gallium arsenide ,  quantum dot ,  lighting and illumination ,  *electric current ,  *indium gallium arsenide ,  *indium arsenide ,  band gap ,  high concentration ,  tandem solar cell ,  intermediate band solar cell ,  *quantum dash ,  gallium indium phosphide
Semi thesaurus term： InGaP ,  *高効率 , 【Automatic Indexing@JST】

JST classification (1)： Graphic and image processing in general  (JE04010I)

Terms in the title (8)： 制約 ,  工学 ,  開発 ,  高効率 ,  InAs ,  InGaAs ,  量子ダッシュ ,  太陽電池