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J-GLOBAL ID：202002219969269906   Reference number：20A0284189

Investigation of gating effect in Si spin MOSFET

SiスピンMOSFETにおけるゲート効果の研究【JST・京大機械翻訳】

Author (9)： Lee Soobeom (Department of Electronic Science and Engineering, Kyoto University, Kyoto, Kyoto 615-8510, Japan) ,  Rortais Fabien (Department of Electronic Science and Engineering, Kyoto University, Kyoto, Kyoto 615-8510, Japan) ,  Ohshima Ryo (Department of Electronic Science and Engineering, Kyoto University, Kyoto, Kyoto 615-8510, Japan) ,  Ando Yuichiro (Department of Electronic Science and Engineering, Kyoto University, Kyoto, Kyoto 615-8510, Japan) ,  Goto Minori (Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan) ,  Miwa Shinji (Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan) ,  Suzuki Yoshishige (Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan) ,  Koike Hayato (Advanced Products Development Center, TDK Corporation, Ichikawa, Chiba 272-8558, Japan) ,  Shiraishi Masashi (Department of Electronic Science and Engineering, Kyoto University, Kyoto, Kyoto 615-8510, Japan)
Material： Applied Physics Letters  (Appl Phys Lett)
Volume： 116  Issue： 2  Page： 022403-022403-5  Publication year： 2020 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： A gate voltage application in ...

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Thesaurus term： FET ,  voltage ,  electrical conductivity ,  semiconductor ,  incommensurability ,  channel ,  conductance ,  bias ,  oxide ,  mobility(ratio) ,  drift velocity ,  electric current ,  *silicon
Semi thesaurus term： 印加電圧 ,  スピン蓄積 , 【Automatic Indexing@JST】

JST classification (2)： Transistors  (NC03070N) ,  Metal-insulator-semiconductor structures  (BM03085X)

Terms in the title (4)： Si ,  スピンMOSFET ,  ゲート効果 ,  研究