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J-GLOBAL ID：202002222533886970   Reference number：20A0033135

Controlling Bi-Provoked Nanostructure Formation in GaAs/GaAsBi Core-Shell Nanowires

GaAs/GaAsBiコア-シェルナノワイヤにおけるバイプロボックナノ構造形成の制御【JST・京大機械翻訳】

Author (10)： Matsuda Teruyoshi (Graduate School of Science and Engineering, Ehime University, Ehime, Japan) ,  Takada Kyohei (Graduate School of Science and Engineering, Ehime University, Ehime, Japan) ,  Yano Kohsuke (Graduate School of Science and Engineering, Ehime University, Ehime, Japan) ,  Tsutsumi Rikuo (Graduate School of Science and Engineering, Ehime University, Ehime, Japan) ,  Yoshikawa Kohei (Graduate School of Science and Engineering, Ehime University, Ehime, Japan) ,  Shimomura Satoshi (Graduate School of Science and Engineering, Ehime University, Ehime, Japan) ,  Shimizu Yumiko (Toray Research Center, Shiga, Japan) ,  Nagashima Kazuki (Institute for Materials Chemistry and Engineering, Kyushu University, Japan) ,  Yanagida Takeshi (Institute for Materials Chemistry and Engineering, Kyushu University, Japan) ,  Ishikawa Fumitaro (Graduate School of Science and Engineering, Ehime University, Ehime, Japan)
Material： Nano Letters  (Nano Lett)
Volume： 19  Issue： 12  Page： 8510-8518  Publication year： 2019 
JST Material Number： W1332A  ISSN： 1530-6984  CODEN： NALEFD  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： We control the formation of Bi...

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Thesaurus term： interface (surface) ,  *nanowire ,  *gallium arsenide ,  surfactant ,  catalyst ,  crystallinity ,  *Bismuth ,  *Gallium ,  quantum confinement ,  *nanostructure ,  twin ,  droplet ,  lattice defect ,  stacking fault ,  supersaturation

Author keywords (6)： Nanowire ,  nanostructure ,  heterostructure ,  GaAs ,  Bi ,  droplet

JST classification (1)： Crystal growth of semiconductors  (BK13040X)

Terms in the title (5)： GaAs ,  GaAsBi ,  コア-シェル ,  ナノワイヤ ,  構造形成