Art

J-GLOBAL ID：202002229744750415   Reference number：20A0531055

Hetero-epitaxial growth and mechanism of one-dimensional InSb nanostructures on GaAs substrate by MOCVD

MOCVDによるGaAs基板上の一次元InSbナノ構造のヘテロエピタキシャル成長と機構【JST・京大機械翻訳】

Author (8)： Jin Y.J. (School of Electronics and Information Technology, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, 510006, China) ,  Zheng X.E. (School of Electronics and Information Technology, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, 510006, China) ,  Gong S.J. (School of Electronics and Information Technology, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, 510006, China) ,  Ke C. (School of Electrical and Electronic Engineering, Nanyang Technology of University, 639798, Singapore) ,  Xiao M.Q. (School of Electronics and Information Technology, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, 510006, China) ,  Ling B. (School of Electrical and Electronic Engineering, Nanyang Technology of University, 639798, Singapore) ,  Yu S.Y. (School of Electronics and Information Technology, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, 510006, China) ,  Zhang D.H. (School of Electrical and Electronic Engineering, Nanyang Technology of University, 639798, Singapore)
Material： Journal of Alloys and Compounds  (J Alloy Compd)
Volume： 823  Page： Null  Publication year： 2020 
JST Material Number： D0083A  ISSN： 0925-8388  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Abstract/Point： As one of the most fundamental...

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Thesaurus term： heteroepitaxy ,  *epitaxy ,  single crystal ,  *indium antimonide ,  *one dimension ,  *nanostructure ,  semiconductor ,  crystal orientation ,  sensor ,  surface chemistry ,  *MOCVD ,  nanowire ,  reconstitution ,  nanomaterial ,  electrotransport

Author keywords (4)： III-V semiconductor ,  InSb ,  Nanowire ,  MOCVD

JST classification (1)： Semiconductor thin films  (BK14040E)

Terms in the title (5)： MOCVD ,  GaAs基板 ,  InSb ,  ナノ構造 ,  成長