Art

J-GLOBAL ID：202002233285149387   Reference number：20A1746652

Realizing high thermoelectric performance in p-type Si_1-x-yGe_xSn_y thin films at ambient temperature by Sn modulation doping

Sn変調ドーピングによる周囲温度でのp型Si_1-x-yGe_xSn_y薄膜における高い熱電性能の実現【JST・京大機械翻訳】

Author (10)： Peng Ying (Guangxi Key Laboratory of Information Material, School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China) ,  Lai Huajun (Guangxi Key Laboratory of Information Material, School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China) ,  Liu Chengyan (Guangxi Key Laboratory of Information Material, School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China) ,  Gao Jie (Guangxi Key Laboratory of Information Material, School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China) ,  Kurosawa Masashi (Department of Materials Physics, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan) ,  Nakatsuka Osamu (Department of Materials Physics, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan) ,  Takeuchi Tsunehiro (Research Center for Smart Energy Technology, Toyota Technological Institute, Nagoya 468-8511, Japan) ,  Zaima Shigeaki (Division of Materials Science and Engineering, Graduate School of Science and Technology, Meijo University, Nagoya 468-8502, Japan) ,  Tanemura Sakae (Guangxi Key Laboratory of Information Material, School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China) ,  Miao Lei (Guangxi Key Laboratory of Information Material, School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China)
Material： Applied Physics Letters  (Appl Phys Lett)
Volume： 117  Issue： 5  Page： 053903-053903-5  Publication year： 2020 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： In this study, we report a pow...

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Thesaurus term： carrier mobility ,  alloy ,  electrical conductivity ,  heat treatment ,  *thin film ,  *tin ,  power factor ,  Body Temperature ,  ternary alloy ,  carrier density ,  RF sputtering ,  *modulation doping ,  RTA ,  nano particle ,  wearable device

JST classification (1)： Semiconductor thin films  (BK14040E)

Terms in the title (4)： Sn ,  変調ドーピング ,  周囲温度 ,  薄膜