Art
J-GLOBAL ID:202002240331759274   Reference number:20A2380999

Reduced Inhomogeneous Broadening in Hexagonal Boron Nitride-Encapsulated MoTe2 Monolayers by Thermal Treatment

熱処理による六方晶窒化ホウ素-カプセル化MoTe_2単分子層における不均一広がりの減少【JST・京大機械翻訳】
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Volume:Issue:Page: 2739-2744  Publication year: 2020 
JST Material Number: W5669A  ISSN: 2637-6113  Document type: Article
Article type: 原著論文  Country of issue: United States (USA)  Language: ENGLISH (EN)
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In this study, we systematical...
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Luminescence of inorganic compounds  ,  Semiconductor thin films  ,  Excitons 
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