Art

J-GLOBAL ID：202002241761136435   Reference number：20A1235859

Low frequency Raman study of interlayer couplings in WS₂-MoS₂ van der Waals heterostructures

WS₂-MoS₂のvan der Waalsヘテロ構造における層間結合の低周波Raman研究

Author (7)： Saito Yuika (Department of Chemistry, Gakushuin University, Mejiro, Toshima, Tokyo 171-0031, Japan) ,  Kondo Takahiro (Department of Chemistry, Gakushuin University, Mejiro, Toshima, Tokyo 171-0031, Japan) ,  Ito Hiroki (Department of Chemistry, Gakushuin University, Mejiro, Toshima, Tokyo 171-0031, Japan) ,  Okada Mitsuhiro (National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8560, Japan) ,  Shimizu Tetsuo (National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8560, Japan) ,  Kubo Toshitaka (National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8560, Japan) ,  Kitaura Ryo (Department of Chemistry, Nagoya University, Furo-cho, Nagoya, Aichi 464-8602, Japan)
Material： Japanese Journal of Applied Physics  (JJAP)
Volume： 59  Issue： 6  Page： 062004 (6pp)  Publication year： Jun. 2020 
JST Material Number： G0520B  ISSN： 0021-4922  CODEN： JJAPB6  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Thesaurus term： tungsten compound ,  sulfide(chalcogenide) ,  *molybdenum sulfide ,  device structure ,  *heterojunction ,  van der Waals force ,  multilayer film ,  LF ,  *Raman spectroscopy ,  Raman spectral line intensity ,  microscope
Semi thesaurus term： hetero-structure ,  interlayer coupling ,  *tungsten sulfide

JST classification (2)： Other contacts  (BM03088W) ,  Infrared spectroscopy and spectrometers  (BD07042H)

Terms in the title (6)： MoS2 ,  VAN ,  ヘテロ構造 ,  層間結合 ,  低周波 ,  研究