Art

J-GLOBAL ID：202002246721430017   Reference number：20A0616574

Near-infrared-II photodetection realized by introducing organic-inorganic charge-transfer-complex photosensitive material into pentacene phototransistor

ペンタセン光トランジスタへの有機-無機電荷移動錯体感光材料導入により実現した近赤外-II光検出【JST・京大機械翻訳】

Author (11)： Wang Haonan (Department of Electronic Engineering, Shaoxing University, Shaoxing, 312000, People’s Republic of China) ,  Liu Shiyan (Department of Electronic Engineering, Shaoxing University, Shaoxing, 312000, People’s Republic of China) ,  Li Yan (Department of Electronic Engineering, Shaoxing University, Shaoxing, 312000, People’s Republic of China) ,  Yue Xiaofeng (Department of Electronic Engineering, Shaoxing University, Shaoxing, 312000, People’s Republic of China) ,  Shen Yifan (Department of Electronic Engineering, Shaoxing University, Shaoxing, 312000, People’s Republic of China) ,  Xu Haiyang (Department of Electronic Engineering, Shaoxing University, Shaoxing, 312000, People’s Republic of China) ,  Xu Haitao (Department of Electronic Engineering, Shaoxing University, Shaoxing, 312000, People’s Republic of China) ,  Tan Yongsheng (Department of Electronic Engineering, Shaoxing University, Shaoxing, 312000, People’s Republic of China) ,  Zeng Liya (Department of Electronic Engineering, Shaoxing University, Shaoxing, 312000, People’s Republic of China) ,  Yao Bo (Department of Electronic Engineering, Shaoxing University, Shaoxing, 312000, People’s Republic of China) ,  Fang Zebo (Department of Electronic Engineering, Shaoxing University, Shaoxing, 312000, People’s Republic of China)
Material： Organic Electronics  (Org Electron)
Volume： 77  Page： Null  Publication year： 2020 
JST Material Number： W1352A  ISSN： 1566-1199  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Abstract/Point： Organic phototransistor (OPT) ...

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Thesaurus term： flexibility ,  photodetector ,  evaporation ,  photosensitive layer ,  *infrared radiation ,  organic compound ,  *photosensitive material ,  *near infrared radiation ,  infrared detector ,  *photodetection ,  *phototransistor ,  optimization ,  *charge transfer complex ,  metal oxide ,  telecommunication

JST classification (2)： General  (NC03081P) ,  Photometry and photodetectors in general  (BD07031F)

Terms in the title (6)： ペンタセン ,  光トランジスタ ,  電荷移動錯体 ,  感光材料 ,  近赤外 ,  光検出