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J-GLOBAL ID:202002247509813362   Reference number:20A1987350

Growth of mono-like Si crystal; unidirectional solidification using a seed crystal and a crucible with the film repelling Si melt

モノライクSi結晶の育成;Si融液に濡れない膜と種結晶を用いた一方向性凝固
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Volume: 2020 (Web)  Page: 40 (WEB ONLY)  Publication year: Jul. 31, 2020 
JST Material Number: L5917A  Document type: Proceedings
Article type: 短報  Country of issue: Japan (JPN)  Language: JAPANESE (JA)
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Crystal growth of semiconductors 
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