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J-GLOBAL ID：202002252179550695   Reference number：20A0495673

A Novel Reverse Conducting SOI-LIGBT with Double Integrated NMOS for Enhanced Reverse Recovery

逆回復強化のための二重集積NMOSを持つ新しい逆伝導SOI-LIGBT【JST・京大機械翻訳】

Author (8)： Li Ajiang (Southeast University,National ASIC System Engineering Research Center,Nanjing,China) ,  Li Shaohong (Southeast University,National ASIC System Engineering Research Center,Nanjing,China) ,  Zhang Long (Southeast University,National ASIC System Engineering Research Center,Nanjing,China) ,  Zhu Jing (Southeast University,National ASIC System Engineering Research Center,Nanjing,China) ,  Tian Tian (Southeast University,National ASIC System Engineering Research Center,Nanjing,China) ,  Zou Yanqin (Southeast University,National ASIC System Engineering Research Center,Nanjing,China) ,  Zhu Guichuang (Southeast University,National ASIC System Engineering Research Center,Nanjing,China) ,  Sun Weifeng (Southeast University,National ASIC System Engineering Research Center,Nanjing,China)
Material： IEEE Conference Proceedings  (IEEE Conf Proc)
Volume： 2019  Issue： IPFA  Page： 1-4  Publication year： 2019 
JST Material Number： W2441A  Document type： Proceedings
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： The reverse recovery failure o...

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Thesaurus term： *IGBT ,  *NMOS structure ,  anode ,  diode ,  robustness ,  failure ,  electric current ,  rectification(electric)
Semi thesaurus term： 微分抵抗 ,  NPNトランジスタ ,  大電流 ,  回復過程 ,  TCAD ,  *逆伝導 , 【Automatic Indexing@JST】

JST classification (1)： Graphic and image processing in general  (JE04010I)

Terms in the title (6)： 回復 ,  強化 ,  集積 ,  NMOS ,  伝導 ,  SOI