Art

J-GLOBAL ID：202002255130207109   Reference number：20A2223428

Spin-dependent transient current in transistor-like nanostructures

トランジスタ様ナノ構造におけるスピン依存過渡電流【JST・京大機械翻訳】

Author (4)： Asano Katsuya (Graduate School of Quantum Science and Technology, Nihon University, 1-8-14 Kanda Surugadai, Chiyoda-ku, Tokyo 101-8308, Japan) ,  Sako Tokuei (Graduate School of Quantum Science and Technology, Nihon University, 1-8-14 Kanda Surugadai, Chiyoda-ku, Tokyo 101-8308, Japan) ,  Sako Tokuei (Laboratory of Physics, College of Science and Technology, Nihon University, 7-24-1 Narashinodai, Funabashi, Chiba 274-8501, Japan) ,  Ishida Hiroshi (College of Humanities and Sciences, Nihon University, 3-25-40 Sakura-Josui, Tokyo 156-8550, Japan)
Material： Journal of Physics. Condensed Matter  (J Phys Condens Matter)
Volume： 32  Issue： 43  Page： 435302 (13pp)  Publication year： 2020 
JST Material Number： B0914B  ISSN： 0953-8984  CODEN： JCOMEL  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Abstract/Point： Transient current in transisto...

Register(free) or Log In to access     To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=20A2223428&from=J-GLOBAL&jstjournalNo=B0914B") }}

Thesaurus term： *electric current ,  *transistor ,  polarization (phenomenon) ,  Rationalization ,  electron correlation ,  medium ,  one dimension ,  Wigner crystal ,  effective potential ,  quantum well ,  *nanostructure ,  probabilistic density function ,  energy state ,  modification
Semi thesaurus term： ドレイン電流 ,  *過渡電流 , 【Automatic Indexing@JST】

JST classification (3)： General theory of electronic transport  (BM03020C) ,  Electronic structure in general  (BM02010K) ,  Electronic structure of crystalline semiconductors  (BM02060N)

Terms in the title (4)： トランジスタ ,  ナノ構造 ,  スピン ,  過渡電流