Art

J-GLOBAL ID：202002256917098452   Reference number：20A1484306

Operation of (111) Ge-on-Insulator n-Channel MOSFET Fabricated by Smart-Cut Technology

スマートカット技術により作製した(111)GeオンインシュレータnチャネルMOSFETの動作【JST・京大機械翻訳】

Author (6)： Lim Cheol-Min (Department of Electrical Engineering and Information Systems, The University of Tokyo, Tokyo, Japan) ,  Zhao Ziqiang (Department of Electrical Engineering and Information Systems, The University of Tokyo, Tokyo, Japan) ,  Sumita Kei (Department of Electrical Engineering and Information Systems, The University of Tokyo, Tokyo, Japan) ,  Toprasertpong Kasidit (Department of Electrical Engineering and Information Systems, The University of Tokyo, Tokyo, Japan) ,  Takenaka Mitsuru (Department of Electrical Engineering and Information Systems, The University of Tokyo, Tokyo, Japan) ,  Takagi Shinichi (Department of Electrical Engineering and Information Systems, The University of Tokyo, Tokyo, Japan)
Material： IEEE Electron Device Letters  (IEEE Electron Device Lett)
Volume： 41  Issue： 7  Page： 985-988  Publication year： 2020 
JST Material Number： B0344B  ISSN： 0741-3106  CODEN： EDLEDZ  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： In this letter, we demonstrate...

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Thesaurus term： mobility(ratio) ,  annealing(heat treatment) ,  semiconductor ,  *oxide ,  FET ,  ion implantation ,  radiation dose ,  electrical characteristic ,  channel
Semi thesaurus term： 電子移動度 ,  駆動電流 ,  高品質 ,  剪断波速度 ,  *nMOSFET , 【Automatic Indexing@JST】

JST classification (1)： Transistors  (NC03070N)

Terms in the title (3)： 作製 ,  Ge ,  nチャネルMOSFET