Art

J-GLOBAL ID：202002257789241806   Reference number：20A1884094

Fabrication and characterization of quantum dot devices based on tetralayer graphene/hexagonal boron nitride heterostructures

4層グラフェン/六方晶窒化ホウ素ヘテロ構造に基づく量子ドットデバイスの作製と特性評価

Author (8)： Iwasaki Takuya (International Center for Young Scientists, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan) ,  Kato Taku (Department of Electrical and Electronic Engineering, Nihon University, Koriyama, Fukushima 963-8642, Japan) ,  Ito Hirohito (Department of Electrical and Electronic Engineering, Nihon University, Koriyama, Fukushima 963-8642, Japan) ,  Watanabe Kenji (Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan) ,  Taniguchi Takashi (Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan) ,  Wakayama Yutaka (International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan) ,  Hatano Tsuyoshi (Department of Electrical and Electronic Engineering, Nihon University, Koriyama, Fukushima 963-8642, Japan) ,  Moriyama Satoshi (International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan)
Material： Japanese Journal of Applied Physics  (JJAP)
Volume： 59  Issue： 2  Page： 024001 (5pp)  Publication year： Feb. 2020 
JST Material Number： G0520B  ISSN： 0021-4922  CODEN： JJAPB6  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Thesaurus term： *quantum dot ,  *boron nitride ,  hexagonal system ,  *electronic equipment ,  graphene ,  characterization ,  transport phenomenon ,  diamond ,  bias
Semi thesaurus term： carrier transport ,  bias voltage ,  electron transport ,  transport property ,  *quantum device ,  *hexagonal boron nitride

JST classification (2)： Other solid-state devices  (NC03150A) ,  Atomic and molecular clusters  (BH09030O)

Terms in the title (7)： 4層 ,  グラフェン ,  六方晶窒化ホウ素 ,  ヘテロ構造 ,  量子ドット ,  作製 ,  特性評価