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J-GLOBAL ID:202002257789241806   Reference number:20A1884094

Fabrication and characterization of quantum dot devices based on tetralayer graphene/hexagonal boron nitride heterostructures

4層グラフェン/六方晶窒化ホウ素ヘテロ構造に基づく量子ドットデバイスの作製と特性評価
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Material:
Volume: 59  Issue:Page: 024001 (5pp)  Publication year: Feb. 2020 
JST Material Number: G0520B  ISSN: 0021-4922  CODEN: JJAPB6  Document type: Article
Article type: 原著論文  Country of issue: United Kingdom (GBR)  Language: ENGLISH (EN)
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All keywords is available on JDreamIII(charged).
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Other solid-state devices  ,  Atomic and molecular clusters 

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