Art

J-GLOBAL ID：202002259308432650   Reference number：20A2241969

Nanowire-based telecom-band light-emitting diodes with efficient light extraction

効率的な光抽出によるナノワイヤベースのテレコムバンド発光ダイオード

Author (12)： Zhang Guoqiang (NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0198, Japan) ,  Zhang Guoqiang (NTT Nanophotonics Center, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0198, Japan) ,  Gnatek Dominika (NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0198, Japan) ,  Takiguchi Masato (NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0198, Japan) ,  Takiguchi Masato (NTT Nanophotonics Center, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0198, Japan) ,  Xu Xuejun (NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0198, Japan) ,  Tateno Kouta (NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0198, Japan) ,  Tateno Kouta (NTT Nanophotonics Center, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0198, Japan) ,  Sasaki Satoshi (NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0198, Japan) ,  Tawara Takehiko (NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0198, Japan) ,  Tawara Takehiko (NTT Nanophotonics Center, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0198, Japan) ,  Gotoh Hideki (NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0198, Japan)
Material： Japanese Journal of Applied Physics  (JJAP)
Volume： 59  Issue： 10  Page： 105003 (8pp)  Publication year： Oct. 2020 
JST Material Number： G0520B  ISSN： 0021-4922  CODEN： JJAPB6  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Thesaurus term： *efficiency ,  *nanowire ,  *light emitting diode ,  catalyst ,  VLS growth ,  integration (accumulation) ,  electric leakage ,  structure ,  indium phosphide ,  indium arsenide ,  circular cone ,  carrier injection ,  *semiconductor nanowire ,  Autocatalyst ,  jointing structure
Semi thesaurus term： *light extraction efficiency ,  vapor-liquid-solid phase growth ,  Monolithic integration ,  electric leakage ,  cone

JST classification (1)： Light emitting devices  (NC03082G)

Terms in the title (2)： ナノワイヤ ,  発光ダイオード