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J-GLOBAL ID：202002260594308779   Reference number：20A1640204

Ferrocene on Insulator: Silane Coupling to a SiO₂ Surface and Influence on Electrical Transport at a Buried Interface with an Organic Semiconductor Layer

絶縁体上のフェロセン:SiO_2表面へのシラン結合および有機半導体層を有する埋め込み界面における電気輸送への影響【JST・京大機械翻訳】

Author (8)： Ikeda Takashi (Graduate School of Material Science, University of Hyogo, Hyogo, Japan) ,  Tahara Keishiro (Graduate School of Material Science, University of Hyogo, Hyogo, Japan) ,  Kadoya Tomofumi (Graduate School of Material Science, University of Hyogo, Hyogo, Japan) ,  Tajima Hiroyuki (Graduate School of Material Science, University of Hyogo, Hyogo, Japan) ,  Toyoda Noriaki (Graduate School of Engineering, University of Hyogo, Hyogo, Japan) ,  Yasuno Satoshi (Japan Synchrotron Radiation Research Institute, Hyogo, Japan) ,  Ozawa Yoshiki (Graduate School of Material Science, University of Hyogo, Hyogo, Japan) ,  Abe Masaaki (Graduate School of Material Science, University of Hyogo, Hyogo, Japan)
Material： Langmuir  (ACS Journal of Fundamental Interfaces Science)
Volume： 36  Issue： 21  Page： 5809-5819  Publication year： 2020 
JST Material Number： A0231B  ISSN： 0743-7463  CODEN： LANGD5  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： A silane coupling-based proced...

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Thesaurus term： X-ray diffraction ,  *interface(surface) ,  vacuum deposition ,  positive hole ,  thin film ,  *organic semiconductor ,  steric conformation ,  gold ,  *silicon ,  *silane ,  *ferrocene ,  oxidation-reduction reaction ,  hydroxy group ,  cyclic voltammetry ,  alkylbenzene

JST classification (1)： Surface chemistry in general  (CB12010J)

Substance index (1)： Toluene

Terms in the title (7)： 絶縁体 ,  フェロセン ,  シラン ,  半導体層 ,  埋め込み ,  界面 ,  電気輸送