Art
J-GLOBAL ID:202002261549280356   Reference number:20A0763578

Excimer laser annealing method for achieving low electrical resistivity and high work function in transparent conductive amorphous In2O3:Zn films on a polyethylene terephthalate substrate

ポリエチレンテレフタレート基板上の透明導電性非晶質In_2O_3:Zn膜における低電気抵抗率と高仕事関数を達成するためのエキシマレーザアニーリング法【JST・京大機械翻訳】
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Material:
Volume: 698  Page: Null  Publication year: 2020 
JST Material Number: B0899A  ISSN: 0040-6090  Document type: Article
Article type: 原著論文  Country of issue: Netherlands (NLD)  Language: ENGLISH (EN)
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We have developed an excimer l...
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Laser irradiation effects and damages  ,  Semiconductor thin films 

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