Art
J-GLOBAL ID：202002262491256367   Reference number：20A0802629

1.0 THz GaN IMPATT Source: Influence of Change in Epitaxial Doping Concentrations

1.0THzのGaNインパット源:エピタキシャルドープ濃度の変化の影響
Author (5)：
BISWAS Arindam

About BISWAS Arindam

(Kazi Nazrul Univ., IND)

About Kazi Nazrul Univ., IND

, 
ACHARYYA Aritra

About ACHARYYA Aritra

(Cooch Behar Government Engineering Coll., IND)

About Cooch Behar Government Engineering Coll., IND

, 
HIRAI Kazuki

About HIRAI Kazuki

(Shizouka Univ., JPN)

About Shizouka Univ., JPN

, 
SATOH Hiroaki

About SATOH Hiroaki

(Shizouka Univ., JPN)

About Shizouka Univ., JPN

, 
INOKAWA Hiroshi

About INOKAWA Hiroshi

(Shizouka Univ., JPN)

About Shizouka Univ., JPN


Material：
生体医歯工学共同研究拠点成果報告会

About 生体医歯工学共同研究拠点成果報告会


Volume： 2019  Page： 39  Publication year： 2020 
JST Material Number： F2283A  Document type： Proceedings
Article type： 短報  Country of issue： Japan (JPN)  Language： ENGLISH (EN)
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*IMPATT diode

About IMPATT diode

, 
*gallium nitride

About gallium nitride

, 
terahertz wave

About terahertz wave

, 
design

About design

, 
impurity semiconductor

About impurity semiconductor

, 
compound semiconductor

About compound semiconductor


Semi thesaurus term：
Thesaurus term/Semi thesaurus term
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All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
*GAN

About GAN

, 
III-V compound semiconductor

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, 
terahertz-wave

About terahertz-wave

, 
device design

About device design


JST classification (2)：
JST classification
Category name(code) classified by JST.
Diodes 
(NC03050R)

About Diodes

,  Electric and electronic parts in general 
(NA05010H)

About Electric and electronic parts in general

Terms in the title (2)：
Terms in the title
Keywords automatically extracted from the title.
GaN

About GaN

, 
パット

About パット


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