Art

J-GLOBAL ID：202002264337219197   Reference number：20A1114683

Enhanced photoluminescence from strained Ge-on-Insulator surface-passivated with hydrogenated amorphous Si

水素化非晶質Siで表面不動態化した歪んだGeオン絶縁体からの光ルミネセンスの増強【JST・京大機械翻訳】

Author (7)： Niikura Kenta (Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Setagaya-ku, Tokyo, 158-0082, Japan) ,  Yamahata Natsuki (Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Setagaya-ku, Tokyo, 158-0082, Japan) ,  Hoshi Yusuke (Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Setagaya-ku, Tokyo, 158-0082, Japan) ,  Takamura Tsukasa (Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Setagaya-ku, Tokyo, 158-0082, Japan) ,  Saito Kimihiko (Faculty of Symbiotic Systems Science, Fukushima University, 1 Kanayagawa, Fukushima, 960-1296, Japan) ,  Konagai Makoto (Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Setagaya-ku, Tokyo, 158-0082, Japan) ,  Sawano Kentarou (Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Setagaya-ku, Tokyo, 158-0082, Japan)
Material： Materials Science in Semiconductor Processing  (Mater Sci Semicond Process)
Volume： 115  Page： Null  Publication year： 2020 
JST Material Number： W1055A  ISSN： 1369-8001  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Abstract/Point： We study influences of the Ge-...

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Thesaurus term： *photoluminescence ,  *silicon ,  *Germanium ,  *passivation ,  insulating material ,  *hydrogenation ,  *amorphous state ,  dopant ,  *amorphous silicon ,  *insulator ,  emission characteristic ,  *surface passivation ,  hydrogenated amorphous silicon ,  *modification
Semi thesaurus term： 歪緩和 ,  高効率 ,  a-Si:H , 【Automatic Indexing@JST】

JST classification (1)： Solar cell  (NC03084O)

Terms in the title (7)： 水素化 ,  非晶質Si ,  表面不動態化 ,  Ge ,  絶縁体 ,  光ルミネセンス ,  増強