Art

J-GLOBAL ID：202002264782222251   Reference number：20A2739024

High-quality AlInN/GaN distributed Bragg reflectors grown by metalorganic vapor phase epitaxy

有機金属気相エピタクシーで成長させた高品質AlInN/GaN分布Bragg反射器

Author (13)： Akagi Takanobu (R&D Laboratories, Stanley Electric Co., Ltd., Yokohama 225-0014, Japan) ,  Akagi Takanobu (Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan) ,  Kozuka Yugo (Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan) ,  Ikeyama Kazuki (Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan) ,  Iwayama Sho (Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan) ,  Kuramoto Masaru (R&D Laboratories, Stanley Electric Co., Ltd., Yokohama 225-0014, Japan) ,  Saito Tatsuma (R&D Laboratories, Stanley Electric Co., Ltd., Yokohama 225-0014, Japan) ,  Tanaka Takayuki (Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan) ,  Takeuchi Tetsuya (Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan) ,  Kamiyama Satoshi (Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan) ,  Iwaya Motoaki (Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan) ,  Akasaki Isamu (Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan) ,  Akasaki Isamu (Graduate School of Engineering and Akasaki Research Center, Nagoya University, Nagoya 464-8603, Japan)
Material： Applied Physics Express  (APEX)
Volume： 13  Issue： 12  Page： 125504 (5pp)  Publication year： Dec. 2020 
JST Material Number： F0599C  ISSN： 1882-0778  CODEN： APEPC4  Document type： Article
Article type： 短報  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Thesaurus term： MOCVD ,  quality ,  *aluminum compound ,  *indium compound ,  *nitride ,  *aluminum nitride ,  *reflector (electromagnetic) ,  *reflecting mirror ,  growth rate ,  protective film ,  threading dislocation ,  reflectivity ,  interface (surface) ,  excess component ,  high quality ,  *Bragg reflector ,  *indium aluminium nitride ,  heterointerface
Semi thesaurus term： organometallic vapor phase epitaxy ,  *aluminium indium nitride ,  cap-layer ,  heterojunction interface

JST classification (2)： Semiconductor-semiconductor contacts with Gr.13-15 element compounds  (BM03082Y) ,  Other optical devices  (BD06060O)

Terms in the title (5)： 有機金属気相エピタクシー ,  成長 ,  高品質 ,  GaN ,  分布Bragg反射器