Art

J-GLOBAL ID：202002266676777361   Reference number：20A0530106

Electronic engineering of transition metal Zn-doped InGaN nanorods arrays for photoelectrochemical water splitting

光電気化学的水分解のための遷移金属ZnドープInGaNナノロッドアレイの電子工学【JST・京大機械翻訳】

Author (10)： Lin Jing (State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, China) ,  Yu Yuefeng (State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, China) ,  Xu Zhenzhu (State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, China) ,  Gao Fangliang (State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, China) ,  Zhang Zhijie (State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, China) ,  Zeng Fanyi (State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, China) ,  Wang Wenliang (State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, China) ,  Wang Wenliang (Department of Electronic Materials, School of Materials Science and Engineering, South China University of Technology, Guangzhou, 510640, China) ,  Li Guoqiang (State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, China) ,  Li Guoqiang (Department of Electronic Materials, School of Materials Science and Engineering, South China University of Technology, Guangzhou, 510640, China)
Material： Journal of Power Sources  (J Power Sources)
Volume： 450  Page： Null  Publication year： 2020 
JST Material Number： B0703B  ISSN： 0378-7753  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Abstract/Point： The fast charge carrier recomb...

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Thesaurus term： *nanorod ,  photoelectrode ,  *zinc ,  crystallinity ,  *doping ,  electronic structure ,  current density ,  photocatalyst ,  photovoltage ,  MBE growth ,  indium ,  *photo-electrochemistry ,  carrier recombination ,  electric charge ,  valence band

Author keywords (6)： InGaN nanorods ,  Zn doping ,  Modified electronic structure ,  Carrier recombination ,  Photovoltage ,  PEC water splitting

JST classification (1)： Solar cell  (NC03084O)

Terms in the title (8)： 光電気化学 ,  水分解 ,  遷移金属 ,  Zn ,  ドープ ,  InGaN ,  ナノロッドアレイ ,  電子工学