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J-GLOBAL ID：202002269055577428   Reference number：20A0528373

Controlled synthesis of nonpolar GaInN/GaN multiple-quantum-shells on GaN nanowires by metal-organic chemical vapour deposition

有機金属化学蒸着によるGaNナノワイヤ上の非極性GaInN/GaN多重量子シェルの制御された合成【JST・京大機械翻訳】

Author (14)： Lu Weifang (Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tenpaku-ku, Nagoya 468-8502, Japan) ,  Goto Nanami (Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tenpaku-ku, Nagoya 468-8502, Japan) ,  Murakami Hedeki (Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tenpaku-ku, Nagoya 468-8502, Japan) ,  Sone Naoki (Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tenpaku-ku, Nagoya 468-8502, Japan) ,  Sone Naoki (Koito Manufacturing Co., LTD., Tokyo 108-8711, Japan) ,  Iida Kazuyoshi (Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tenpaku-ku, Nagoya 468-8502, Japan) ,  Iida Kazuyoshi (Toyota Gosei Co., Ltd., Aichi 452-8564, Japan) ,  Terazawa Mizuki (Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tenpaku-ku, Nagoya 468-8502, Japan) ,  Han Dong-Pyo (Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tenpaku-ku, Nagoya 468-8502, Japan) ,  Iwaya Motoaki (Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tenpaku-ku, Nagoya 468-8502, Japan) ,  Tekeuchi Tetsuya (Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tenpaku-ku, Nagoya 468-8502, Japan) ,  Kamiyama Satoshi (Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tenpaku-ku, Nagoya 468-8502, Japan) ,  Akasaki Isamu (Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tenpaku-ku, Nagoya 468-8502, Japan) ,  Akasaki Isamu (Akasaki Research Center, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 460-8601, Japan)
Material： Applied Surface Science  (Appl Surf Sci)
Volume： 509  Page： Null  Publication year： 2020 
JST Material Number： B0707B  ISSN： 0169-4332  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Abstract/Point： Nonpolar GaInN/GaN multiple-qu...

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Thesaurus term： light emitting diode ,  electron microscopy ,  recombination(connection) ,  nonpolarity ,  *nanowire ,  *multiplex ,  droplet ,  cathodoluminescence ,  optimization ,  *MOCVD ,  *indium ,  positive hole ,  *gallium nitride
Semi thesaurus term： 発光強度 ,  発光特性 ,  結晶品質 , 【Automatic Indexing@JST】

Author keywords (5)： Nanowire ,  GaInN/GaN MQSs ,  m-plane ,  CL ,  STEM

JST classification (2)： Luminescence of semiconductors  (BM08092S) ,  Semiconductor thin films  (BK14040E)

Terms in the title (7)： 有機金属化学蒸着 ,  GaN ,  ナノワイヤ ,  非極性 ,  多重 ,  量子 ,  シェル