Art

J-GLOBAL ID：202002269107112606   Reference number：20A2342169

Behaviour of Raman B₁ (high) mode and evaluation of crystalline quality in the In_xGa_1-xN alloys grown by RF-MBE

RF-MBEで成長させたIn_xGa_1-xN合金におけるRaman B_1(高)モードの挙動および結晶品質の評価【JST・京大機械翻訳】

Author (4)： Bhuiyan Ashraful G (Department of Electrical and Electronic Engineering, Khulna University of Engineering and Technology (KUET), Khulna, Bangladesh) ,  Kuroda Kenji (Graduate School of Electrical and Electronics Engineering, University of Fukui, Fukui, Japan) ,  Islam Md Sherajul (Department of Electrical and Electronic Engineering, Khulna University of Engineering and Technology (KUET), Khulna, Bangladesh) ,  Hashimoto Akihiro (Graduate School of Electrical and Electronics Engineering, University of Fukui, Fukui, Japan)
Material： Bulletin of Materials Science  (Bull Mater Sci)
Volume： 43  Issue： 1  Page： 278  Publication year： 2020 
JST Material Number： T0142A  ISSN： 0250-4707  Document type： Article
Article type： 原著論文  Country of issue： Germany, Federal Republic of (DEU)  Language： ENGLISH (EN)

Abstract/Point： Abstract: In_xGa<sub...

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Thesaurus term： Raman spectrum ,  *alloy ,  *indium ,  X-ray diffractometry ,  HF ,  crystallinity ,  ternary alloy ,  MBE growth ,  RHEED ,  FWHM
Semi thesaurus term： *RF-MBE ,  *結晶品質 ,  InGaN ,  信号強度 ,  高品質 , 【Automatic Indexing@JST】

Author keywords (3)： InGaN ,  RF-MBE ,  Raman B₁ mode

JST classification (4)： Infrared spectra,Raman scattering and Raman spectra of inorganic compounds  (BM08063C) ,  Manufacturing of ceramics and ceramic whiteware  (YC03020V) ,  Thin films of other inorganic compounds  (BK14060A) ,  Luminescence of semiconductors  (BM08092S)

Terms in the title (7)： RF-MBE ,  成長 ,  合金 ,  高 ,  挙動 ,  結晶品質 ,  評価