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J-GLOBAL ID：202002269953686628   Reference number：20A0033714

Tunneling spectroscopy of an indium adatom precisely manipulated on the cross-sectional surface of InAs/GaSb quantum structures

InAs/GaSb量子構造の断面表面上に正確に操作されたインジウム吸着原子のトンネル分光法【JST・京大機械翻訳】

Author (4)： Suzuki Kyoichi (Fukuoka Institute of Technology, 3-30-1, Wajiro-Higashi, Higashi-ku, Fukuoka 811-0295, Japan) ,  Suzuki Kyoichi (NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atshugi-shi, Kanagawa 243-0198, Japan) ,  Onomitsu Koji (NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atshugi-shi, Kanagawa 243-0198, Japan) ,  Kanisawa Kiyoshi (NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atshugi-shi, Kanagawa 243-0198, Japan)
Material： Physical Review. B  (Physical Review. B. Covering Condensed Matter and Materials Physics)
Volume： 100  Issue： 23  Page： 235306  Publication year： 2019 
JST Material Number： D0746A  ISSN： 2469-9950  CODEN： PRBMDO  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： Indium atom manipulation was a...

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Thesaurus term： multilayer ,  *gallium antimonide ,  interaction ,  *tunneling spectroscopy ,  conduction electron ,  tunnel effect ,  low temperature ,  semiconductor ,  conduction band ,  hopping conduction ,  *indium ,  tunnel junction ,  scanning tunneling microscope ,  *indium arsenide ,  band gap

JST classification (2)： Semiconductor thin films  (BK14040E) ,  Surface structure of semiconductors  (BK15030A)

Terms in the title (6)： InAs ,  GaSb ,  量子構造 ,  インジウム ,  吸着原子 ,  トンネル分光法