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J-GLOBAL ID：202002270742665789   Reference number：20A2233186

Physical vapor deposition using a coaxial ion acceleration method

同軸イオン加速法を用いた物理蒸着【JST・京大機械翻訳】

Author (3)： Kobayashi D. (Department of Physics, College of Science and Technology, Nihon University, Tokyo 101-8308, Japan) ,  Asai T. (Department of Physics, College of Science and Technology, Nihon University, Tokyo 101-8308, Japan) ,  Ashizawa Y. (Department of Electronic Engineering, College of Science and Technology, Nihon University, Tokyo 101-8308, Japan)
Material： Review of Scientific Instruments  (Rev Sci Instrum)
Volume： 91  Issue： 9  Page： 095109-095109-4  Publication year： 2020 
JST Material Number： D0517A  ISSN： 0034-6748  CODEN： RSINAK  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： A novel physical vapor deposit...

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Thesaurus term： *ion ,  rare gas ,  ion implantation ,  plasma temperature ,  *vapor deposition ,  *physical vapor deposition ,  plasma current ,  chamber ,  film deposition ,  *ion acceleration

JST classification (2)： Manufacturing technology of solid-state devices  (NC03030V) ,  Electron and ion sources  (BD02020U)

Terms in the title (3)： 同軸 ,  イオン加速 ,  物理蒸着