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J-GLOBAL ID：202002274084650644   Reference number：20A0486355

Synthesis of a Novel Rocksalt-Type Ternary Nitride Semiconductor MgSnN₂ Using the Metathesis Reaction under High Pressure

高圧下でのメタセシス反応を用いた新しい岩塩型三元窒化物半導体MgSnN_2の合成【JST・京大機械翻訳】

Author (5)： Kawamura Fumio (High pressure group, National Institute for Materials Science, Namiki 1-1, Tskuba, 305-0044, Ibaraki, Japan) ,  Imura Masataka (Widegap semiconductor group, National Institute for Materials Science, Namiki 1-1, Tskuba, 305-0044, Ibaraki, Japan) ,  Murata Hidenobu (Department of Materials Science, Osaka Prefecture University, 1-1 Gakuencho, Naka-ku, 599-8531, Sakai Osaka, Japan) ,  Yamada Naoomi (Department of Applied Chemistry, Chubu University, 1200 Matsumoto, 487-8501, Kasugai Aichi, Japan) ,  Taniguchi Takashi (High pressure group, National Institute for Materials Science, Namiki 1-1, Tskuba, 305-0044, Ibaraki, Japan)
Material： European Journal of Inorganic Chemistry  (EurJIC)
Volume： 2020  Issue： 5  Page： 446-451  Publication year： 2020 
JST Material Number： B0264C  ISSN： 1434-1948  CODEN： EJICFO  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： Novel ternary nitride semicond...

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Thesaurus term： *nitride ,  photocatalyst ,  crystallinity ,  pigment ,  *rock salt ,  absorber ,  *metathesis ,  photovoltage ,  powder ,  band gap ,  gallium nitride ,  cathodoluminescence ,  *high pressure ,  *semiconductor ,  earth(the globe)

Author keywords (5)： Ternary nitrides ,  Semiconductors ,  Green chemistry ,  High-pressure synthesis ,  Metathesis reactions

JST classification (1)： Complexes of 9 and 10 groups  (CE01050Y)

Terms in the title (4)： 高圧 ,  メタセシス ,  岩塩 ,  窒化物半導体