Art

J-GLOBAL ID：202002277710080035   Reference number：20A0019555

Low-temperature epitaxial growth of high-quality GaON films on ZnO nanowires for superior photoelectrochemical water splitting

優れた光電気化学的水分解のためのZnOナノワイヤ上の高品質GaON膜の低温エピタキシャル成長【JST・京大機械翻訳】

Author (10)： Ma Hong-Ping (State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai, 200433, China) ,  Yang Jia-He (State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai, 200433, China) ,  Tao Jia-Jia (State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai, 200433, China) ,  Yuan Kai-Ping (State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai, 200433, China) ,  Cheng Pei-Hong (School of Physical Science and Technology, Shanghai Tech University, Shanghai, 201210, China) ,  Huang Wei (State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai, 200433, China) ,  Wang Jia-Cheng (State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China) ,  Guo Qi-Xin (Department of Electrical and Electronic Engineering, Synchrotron Light Application Center, Saga University, Saga, 840-8502, Japan) ,  Lu Hong-Liang (State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai, 200433, China) ,  Zhang David Wei (State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai, 200433, China)
Material： Nano Energy
Volume： 66  Page： Null  Publication year： 2019 
JST Material Number： W3116A  ISSN： 2211-2855  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Abstract/Point： Gallium oxynitride (GaON) is a...

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Thesaurus term： light trapping ,  *low temperature ,  core-shell structure ,  carrier density ,  nitrogen ,  *zinc oxide ,  optimization ,  *epitaxy ,  photocurrent ,  plasma ,  electric field ,  gallium nitride ,  *photo-electrochemistry ,  electric current ,  band gap

Author keywords (5)： Gallium oxynitride ,  Plasma-enhanced atomic layer deposition ,  Thickness-dependent photoelectrochemical performance ,  Epitaxial growth ,  Electric field intensity

JST classification (2)： Secondary batteries  (YB04030K) ,  Carbon and its compounds  (YB02060D)

Terms in the title (6)： 光電気化学 ,  水分解 ,  ZnOナノワイヤ ,  高品質 ,  低温 ,  エピタキシャル成長