Art

J-GLOBAL ID：202002279450006875   Reference number：20A1745877

Enhancement of superconducting transition temperature in electrochemically etched FeSe/LaAlO₃ films

電気化学的にエッチングされたFeSe/LaAlO₃膜の超伝導転移温度の向上

Author (6)： Shikama Naoki (Department of Basic Science, University of Tokyo, Meguro, Tokyo 153-8902, Japan) ,  Sakishita Yuki (Department of Basic Science, University of Tokyo, Meguro, Tokyo 153-8902, Japan) ,  Nabeshima Fuyuki (Department of Basic Science, University of Tokyo, Meguro, Tokyo 153-8902, Japan) ,  Katayama Yumiko (Department of Basic Science, University of Tokyo, Meguro, Tokyo 153-8902, Japan) ,  Ueno Kazunori (Department of Basic Science, University of Tokyo, Meguro, Tokyo 153-8902, Japan) ,  Maeda Atsutaka (Department of Basic Science, University of Tokyo, Meguro, Tokyo 153-8902, Japan)
Material： Applied Physics Express  (APEX)
Volume： 13  Issue： 8  Page： 083006 (4pp)  Publication year： Aug. 2020 
JST Material Number： F0599C  ISSN： 1882-0778  CODEN： APEPC4  Document type： Article
Article type： 短報  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Thesaurus term： *electrochemical reaction ,  *etching ,  *selenide (chalcogenide) ,  *iron compound ,  *lanthanum compound ,  *aluminum compound ,  *metal oxide ,  oxide ,  thin film ,  *transition temperature ,  transistor ,  voltage ,  electrical resistivity ,  *iron selenide ,  oxide thin film ,  *superconducting transition temperature
Semi thesaurus term： electric double layer transistor structure ,  gate voltage

JST classification (1)： Properties of metallic superconductors  (BM04022R)

Terms in the title (4)： 電気化学 ,  エッチング ,  LaAlO3 ,  超伝導転移温度