Art

J-GLOBAL ID：202002280410647488   Reference number：20A0148736

Increase in Current Density at Metal/GeO₂/n-Ge Structure by Using Laminated Electrode

積層電極を用いた金属/GeO_2/n-Ge構造における電流密度の増加【JST・京大機械翻訳】

Author (6)： Tsukamoto Takahiro (The University of Electro-Communications, Chofu, Tokyo, Japan) ,  Kurihara Shota (Tokyo University of Agriculture and Technology, Koganei, Tokyo, Japan) ,  Hirose Nobumitsu (National Institute of Information and Communications Technology, Koganei, Tokyo, Japan) ,  Kasamatsu Akifumi (National Institute of Information and Communications Technology, Koganei, Tokyo, Japan) ,  Matsui Toshiaki (National Institute of Information and Communications Technology, Koganei, Tokyo, Japan) ,  Suda Yoshiyuki (Tokyo University of Agriculture and Technology, Koganei, Tokyo, Japan)
Material： Electronic Materials Letters
Volume： 16  Issue： 1  Page： 41-46  Publication year： 2020 
JST Material Number： W4309A  ISSN： 1738-8090  Document type： Article
Article type： 原著論文  Country of issue： Germany, Federal Republic of (DEU)  Language： ENGLISH (EN)

Abstract/Point： In a metal/n-Ge structure, Fer...

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Thesaurus term： depth profile ,  oxide ,  X-ray photoelectron spectroscopy ,  film thickness ,  *current density ,  pinning ,  Gibbs free energy ,  Aluminum ,  Titanium ,  interface (surface) ,  spectrum ,  oxidized layer ,  Fermi level ,  Oxygen ,  Schottky barrier height

Author keywords (5)： Pinning ,  n-Ge ,  Laminated electrode ,  Ti ,  GeO2

JST classification (1)： Semiconductor-metal contacts  (BM03084G)

Terms in the title (2)： Ge ,  電流密度