About Gotow Takahiro
About The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo, 113-8656, Japan
About Mitsuhara Manabu
About NTT Device Technology Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan
About Hoshi Takuya
About NTT Device Technology Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan
About Sugiyama Hiroki
About NTT Device Technology Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan
About Takenaka Mitsuru
About The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo, 113-8656, Japan
About Takagi Shinichi
About The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo, 113-8656, Japan
About Journal of Applied Physics
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About leakage current
About heterojunction
About indium gallium arsenide
About electrical characteristic
About channel
About electric current
About impurity concentration
About beryllium
About recombination(connection)
About impurity
About interface(surface)
About temperature dependence
About doping
About ヘテロ界面
About ヒ化アンチモン化ガリウム
About Luminescence of semiconductors
About Semiconductor-semiconductor contacts with Gr.13-15 element compounds
About ソース
About 不純物
About プロファイル
About ヘテロ接合
About 垂直
About トンネル電界効果トランジスタ
About 性能向上