Art
J-GLOBAL ID：202002286673155089   Reference number：20A0006430

Performance enhancement of p-GaAs0.51Sb0.49/In0.53Ga0.47As hetero-junction vertical tunneling field-effect transistors with abrupt source impurity profile

急峻なソース不純物プロファイルを持つヘテロ接合垂直トンネル電界効果トランジスタとしてのp-GaAs_0.51Sb_0.49/In_0.53Ga_0.47Asの性能向上【JST・京大機械翻訳】
Author (6)：
Gotow Takahiro

About Gotow Takahiro

(The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo, 113-8656, Japan)

About The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo, 113-8656, Japan

, 
Mitsuhara Manabu

About Mitsuhara Manabu

(NTT Device Technology Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan)

About NTT Device Technology Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan

, 
Hoshi Takuya

About Hoshi Takuya

(NTT Device Technology Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan)

About NTT Device Technology Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan

, 
Sugiyama Hiroki

About Sugiyama Hiroki

(NTT Device Technology Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan)

About NTT Device Technology Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan

, 
Takenaka Mitsuru

About Takenaka Mitsuru

(The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo, 113-8656, Japan)

About The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo, 113-8656, Japan

, 
Takagi Shinichi

About Takagi Shinichi

(The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo, 113-8656, Japan)

About The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo, 113-8656, Japan


Material：
Journal of Applied Physics  (Journal of General Physics and its Application to Other Sciences and to Industry)

About Journal of Applied Physics


Volume： 126  Issue： 21  Page： 214502-214502-6  Publication year： 2019 
JST Material Number： C0266A  ISSN： 0021-8979  CODEN： JAPIAU  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)
Abstract/Point：
Abstract/Point
Japanese summary of the article(about several hundred characters).
All summary is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
The effects of source impurity...
Register(free) or Log In to access 

Please login to MyJ-GLOBAL to see full information. You also need to select "Display abstract, etc. of medical articles" in your MyJ-GLOBAL account page in order to see abstracts, etc. of medical articles.

   To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=20A0006430&from=J-GLOBAL&jstjournalNo=C0266A") }}
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
leakage current

About leakage current

, 
*heterojunction

About heterojunction

, 
indium gallium arsenide

About indium gallium arsenide

, 
electrical characteristic

About electrical characteristic

, 
channel

About channel

, 
electric current

About electric current

, 
impurity concentration

About impurity concentration

, 
beryllium

About beryllium

, 
recombination(connection)

About recombination(connection)

, 
*impurity

About impurity

, 
interface(surface)

About interface(surface)

, 
temperature dependence

About temperature dependence

, 
doping

About doping


Semi thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
ヘテロ界面

About ヘテロ界面

, 
ヒ化アンチモン化ガリウム

About ヒ化アンチモン化ガリウム

, 【Automatic Indexing@JST】
JST classification (2)：
JST classification
Category name(code) classified by JST.
Luminescence of semiconductors 
(BM08092S)

About Luminescence of semiconductors

,  Semiconductor-semiconductor contacts with Gr.13-15 element compounds 
(BM03082Y)

About Semiconductor-semiconductor contacts with Gr.13-15 element compounds

Terms in the title (7)：
Terms in the title
Keywords automatically extracted from the title.
ソース

About ソース

, 
不純物

About 不純物

, 
プロファイル

About プロファイル

, 
ヘテロ接合

About ヘテロ接合

, 
垂直

About 垂直

, 
トンネル電界効果トランジスタ

About トンネル電界効果トランジスタ

, 
性能向上

About 性能向上


Return to Previous Page

TOP

BOTTOM