Art

J-GLOBAL ID：202002289109994371   Reference number：20A0215788

Hole-Induced Degradation in ${E}$ -Mode GaN MIS-FETs: Impact of Substrate Terminations

EモードGaN MIS-FETにおける正孔誘起劣化:基板終端の影響【JST・京大機械翻訳】

Author (6)： Hua Mengyuan (Department of Electrical and Electronic Engineering, The Southern University of Science and Technology, Shenzhen, China) ,  Yang Song (Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Kowloon, Hong Kong) ,  Wei Jin (Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Kowloon, Hong Kong) ,  Zheng Zheyang (Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Kowloon, Hong Kong) ,  He Jiabei (Department of Electrical and Electronic Engineering, The Southern University of Science and Technology, Shenzhen, China) ,  Chen Kevin J. (Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Kowloon, Hong Kong)
Material： IEEE Transactions on Electron Devices  (IEEE Trans Electron Devices)
Volume： 67  Issue： 1  Page： 217-223  Publication year： 2020 
JST Material Number： C0222A  ISSN： 0018-9383  CODEN： IETDAI  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： We conducted reliability chara...

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Thesaurus term： bias ,  *positive hole ,  semiconductor ,  characterization ,  *gallium nitride ,  FET ,  insulator ,  earth (ground connection) ,  reliability (property) ,  floating ,  threshold voltage
Semi thesaurus term： 基板バイアス ,  オフ状態 , 【Automatic Indexing@JST】

JST classification (1)： Transistors  (NC03070N)

Terms in the title (6)： GaN ,  MIS ,  FET ,  正孔 ,  誘起 ,  終端