Art

J-GLOBAL ID：202002291363557823   Reference number：20A0819011

Impact of Homogeneously Dispersed Al Nanoclusters by Si-monolayer Insertion into Hf_0.5Zr_0.5O₂ Film on FeFET Memory Array with Tight Threshold Voltage Distribution

強い閾値電圧分布を持つFeFETメモリアレイ上のHf_0.5Zr_0.5O_2膜へのSi単分子層挿入による均一分散Alナノクラスタの影響【JST・京大機械翻訳】

Author (10)： Maekawa K. (Renesas Electronics Corp,Device Technology Div.,Hitachinaka, Ibaraki,Japan) ,  Yamashita T. (Renesas Electronics Corp,Device Technology Div.,Hitachinaka, Ibaraki,Japan) ,  Yamaguchi T. (Renesas lectronics Corp,Process Production Technology Div.,Hitachinaka, Ibaraki,Japan) ,  Ohara T. (Renesas Electronics Corp,Device Technology Div.,Hitachinaka, Ibaraki,Japan) ,  Amo A. (Renesas Electronics Corp,Device Technology Div.,Hitachinaka, Ibaraki,Japan) ,  Tsukuda E. (Renesas Electronics Corp,Device Technology Div.,Hitachinaka, Ibaraki,Japan) ,  Sonoda K. (Renesas Electronics Corp,Device Technology Div.,Hitachinaka, Ibaraki,Japan) ,  Yanagita H. (Renesas Electronics Corp,Device Technology Div.,Hitachinaka, Ibaraki,Japan) ,  Inoue M. (Renesas lectronics Corp,Process Production Technology Div.,Hitachinaka, Ibaraki,Japan) ,  Matsuura M. (Renesas lectronics Corp,Process Production Technology Div.,Hitachinaka, Ibaraki,Japan)
Material： IEEE Conference Proceedings  (IEEE Conf Proc)
Volume： 2019  Issue： IEDM  Page： 15.4.1-15.4.4  Publication year： 2019 
JST Material Number： W2441A  Document type： Proceedings
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： Threshold voltage (Vth) variat...

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Thesaurus term： *monomolecular layer ,  *silicon ,  *memory(computer) ,  *nanocluster ,  growth rate ,  ferroelectric domain ,  electric potential ,  *aluminum
Semi thesaurus term： *閾値電圧 ,  *均一分散 ,  *メモリアレイ ,  *FeFET , 【Automatic Indexing@JST】

JST classification (1)： Graphic and image processing in general  (JE04010I)

Terms in the title (8)： 閾値電圧分布 ,  FeFET ,  メモリアレイ ,  Si ,  単分子層 ,  均一分散 ,  Al ,  ナノクラスタ