Rchr
J-GLOBAL ID:202101001500442891
Update date: Jul. 18, 2024
IMAI Daichi
今井 大地 | IMAI Daichi
Affiliation and department:
Job title:
Associate professor
Research field (1):
Crystal engineering
Research keywords (3):
窒化物半導体
, 光半導体デバイス
, 半導体光物性
Research theme for competitive and other funds (8):
- 2023 - 2028 Departure from conductivity control with impurity doping in widegap semiconductors
- 2023 - 2026 ワイドギャップ半導体における不純物ドーピング伝導制御からの脱却
- 2022 - 2025 次世代光源開発に資する窒化物系混晶半導体サブギャップ領域の光・熱物性制御指針解明
- 2019 - 2023 蛍光バイオイメージング用小型光源をめざした超短パルス半導体レーザの要素技術開発
- 2020 - 2022 Optical characterizations in the sub-bandgap energy region of nitride semiconductor alloy thin films for the development of low-internal-loss LD waveguides
- 2017 - 2020 InN/GaN短周期超格子による窒化物半導体レーザー導波光制御構造の高機能化
- 2015 - 2017 短周期超格子による窒化物系擬似InGaN混晶の連続的バンドエンジニアリング
- 2013 - 2015 フォノン輸送過程解析に基づく窒化物系光半導体のデバイス物理解明
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Papers (19):
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Daichi Imai, Yuto Murakami, Hayata Toyoda, Kouki Noda, Kyosuke Masaki, Kazutoshi Kubo, Mayu Nomura, Makoto Miyoshi, Takao Miyajima, Tetsuya Takeuchi. Sub-bandgap optical absorption processes in 300-nm-thick Al1-xInxN alloys grown on a c-plane GaN/sapphire template. Journal of Applied Physics. 2024. 135. 3
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Kouki Noda, Yuto Murakami, Hayata Toyoda, Kana Shibata, Youna Tsukada, Daichi Imai, Tetsuya Takeuchi, Makoto Miyoshi, Takao Miyajima. Characterizations of Subbandgap Optical Absorption in Undoped-GaN and 90 nm-Thick Al1-xInxN Thin Film on Sapphire Substrates Grown by Metal-Organic Chemical Vapor Deposition. Physica Status Solidi (B) Basic Research. 2024
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Ayumu Yabutani, Ryota Hasegawa, Ryosuke Kondo, Eri Matsubara, Daichi Imai, Sho Iwayama, Yoshito Jin, Tatsuya Matsumoto, Masamitsu Toramaru, Hironori Torii, et al. Development of High-Reflectivity and Antireflection Dielectric Multilayer Mirrors for AlGaN-Based Ultraviolet-B Laser Diodes and their Device Applications. physica status solidi (a). 2023
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宮嶋孝夫, 清木良麻, 今井康彦, 隅谷和嗣, 木村滋, 近藤剣, 高木健太, 市川貴登, 澁谷弘樹, 上山智, et al. Structural Analysis of Ga1-xInxN/GaN Three-quantum Wells Grown on Side-walls of GaN Nano-wires by using 1100 Diffraction of X-ray Nano-beam. SPring-8/SACLA利用研究成果集(Web). 2023. 11. 2
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宮嶋孝夫, 市川貴登, 近藤剣, 高木健太, 安田伸広, 今井康彦, 中尾知代, 荒井重勇, 後藤七美, 上山智, et al. X-ray Micro-beam Diffraction from GaN-based Quantum-shells Extracted by using Focused Ion Beam. SPring-8/SACLA利用研究成果集(Web). 2023. 11. 2
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MISC (40):
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野田幸樹, 加藤晴気, 正木京介, 村上裕人, 豊田隼大, 野村麻友, 市川颯人, 今井大地, 今井大地, 宮嶋孝夫, et al. Analysis of the carrier recombination processes and in-gap energy states in Al1-xInxN alloys. 名城大学総合研究所紀要. 2023. 28
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野村麻友, 伊藤紫音, 村上裕人, 豊田隼大, 加藤晴気, 正木京介, 野田幸樹, 市川颯人, 今井大地, 今井大地, et al. Development of characterization method of thermal conductivity for nitride-based widegap semiconductors by photothermal deflection spectroscopy. 名城大学総合研究所紀要. 2023. 28
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市川颯人, 宇田陽, 野田幸樹, 今井大地, 竹内哲也, 宮嶋孝夫. Analysis of the in-gap energy states in GaN- based tunnel junctions by using photothermal deflection spectroscopy. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2023. 84th
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野村麻友, 野田幸樹, 今井大地, 宮嶋孝夫. Theoretical studies on characterizations of optical and thermal properties of nitride-based semiconductor alloy thin films by photothermal deflection spectroscopy. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2023. 84th
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今井大地. Analysis of the Optical Absorption and Heat Generation Processes via Sub-bandgap Energy States in High Crystalline-quality Nitride-based Semiconductor Alloy Thin Films. 豊田研究報告(Web). 2023. 76
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Lectures and oral presentations (20):
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Characterization of the Optical Constants in Al1-xInxN Alloys Grown on a c-Plane freestanding GaN Substrate; The effect of the potential fluctuations
(1st International Workshop on AlGaN based UV-Laserdiodes 2019)
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Characterization of Potential Fluctuations and Optical Constants in Al1-xInxN Alloys Grown on C-Plane GaN Substrate
(13th Internal Conference on Nitride Semiconductors 2019)
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Pulsed-Laser Activation of Implanted Mg Acceptors in GaN Grown on a GaN Substrate
(13th Internal Conference on Nitride Semiconductors 2019)
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Optically Pumped GaN-Based Laterally Coupled Distributed Feedback Semiconductor Lasers with 3rd-Order Surface Gratings Grown on Pendeo-Epitaxy GaN
(13th Internal Conference on Nitride Semiconductors 2019)
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Structural analysis of m-plane Ga1-xInxN/GaN multi-quantum wells grown on GaN nano-wires by using 1 -1 0 0 reflection of X-ray nano-beam
(2018 International Workshop on Nitride Semiconductors 2018)
more...
Professional career (1):
Work history (3):
- 2015 - 2016 Chiba University Center for SMART Green Innovation Research Researcher
- 2014 - 2015 Chiba University Center for SMART Green Innovation Research JSPS Research fellow
- 2013/04 - 2014/03 千葉大学大学院 工学研究科 日本学術振興会特別研究員(DC2)
Committee career (2):
- 2020 - 2021 ISPlasma 2021, Program committee
- 2018 - 2019 2019 International Conference on Solid State devices and Materials (SSDM2019) , Steering committee
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