Kobayashi Takuma

コバヤシタクマ | Kobayashi Takuma

Affiliation and department：
Job title： Associate Professor
Homepage URL (2)： http://www-ade.prec.eng.osaka-u.ac.jp/ , http://www-ade.prec.eng.osaka-u.ac.jp/index-e.php

Research field (3)： Optical engineering and photonics , Thin-film surfaces and interfaces , Electric/electronic material engineering

Research keywords (4)： Wide Bandgap Semiconductors , Power Devices , Quantum Technology , Defects

Research theme for competitive and other funds (7)：

2024 - 2029 Deep Insights into Heterointerface Engineering in Silicon Carbide based Devices
2024 - 2028 Unlocking the Future Potential of Silicon Carbide in Power Electronics
2022 - 2026 Development of fundamental technologies for a scalable silicon carbide quantum processor
2023 - 2025 Study of carrier scattering mechanisms in gallium nitride MOS devices
2021 - 2023 電子状態観察と分光学的解析による炭化珪素/酸化膜界面欠陥の起源解明

Show all

Papers (42)：

Kazuki Tomigahara, Masahiro Hara, Mikito Nozaki, Takuma Kobayashi, Heiji Watanabe. Impacts of post-deposition annealing on hole trap generation at SiO₂/p-type GaN MOS interfaces. Applied Physics Express. 2024. 17. 8. 081002-1-081002-4
Sosuke Iwamoto, Takayoshi Shimura, Heiji Watanabe, Takuma Kobayashi. Oxygen-related defects in 4H-SiC from first principles. Applied Physics Express. 2024. 17. 5. 051008-1-051008-5
Kentaro Onishi, Takato Nakanuma, Kosuke Tahara, Katsuhiro Kutsuki, Takayoshi Shimura, Heiji Watanabe, Takuma Kobayashi. Generation of single photon emitters at a SiO₂/SiC interface by high-temperature oxidation and reoxidation at lower temperatures. Applied Physics Express. 2024. 17. 5. 051004-1-051004-5
Takuma Kobayashi, Asato Suzuki, Takato Nakanuma, Mitsuru Sometani, Mitsuo Okamoto, Akitaka Yoshigoe, Takayoshi Shimura, Heiji Watanabe. Characterization of nitrided SiC(1-100) MOS structures by means of electrical measurements and X-ray photoelectron spectroscopy. Materials Science in Semiconductor Processing. 2024. 175. 108251-1-108251-7
Takuma Kobayashi, Kazuki Tomigahara, Mikito Nozaki, Takayoshi Shimura, Heiji Watanabe. Separate evaluation of interface and oxide hole traps in SiO₂/GaN MOS structures with below- and above-gap light excitation. Applied Physics Express. 2023. 17. 1. 011003-1-011003-5

ｍore...

MISC (9)：

Maximilian Schober, Nicolas Jungwirth, Takuma Kobayashi, Johannes A.F. Lehmeyer, Michael Krieger, Heiko B. Weber, Michel Bockstedte. The Optical Properties of the Carbon Di-Vacancy-Antisite Complex in the Light of the TS Photoluminescence Center. Defect and Diffusion Forum. 2023. 426. 43-48
Yutaka Terao, Takuji Hosoi, Takuma Kobayashi, Takayoshi Shimura, Heiji Watanabe. Characterization of Electron Traps in Gate Oxide of m-plane SiC MOS Capacitors. 2022 IEEE International Reliability Physics Symposium (IRPS). 2022. P66-1-P66-4
Takato Nakanuma, Asato Suzuki, Yu Iwakata, Takuma Kobayashi, Mitsuru Sometani, Mitsuo Okamoto, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe. Investigation of reliability of NO nitrided SiC(1100) MOS devices. 2022 IEEE International Reliability Physics Symposium (IRPS). 2022. 3B.2-1-3B.2-5
Tsunenobu Kimoto, Mitsuaki Kaneko, Keita Tachiki, Koji Ito, Ryoya Ishikawa, Xilun Chi, Dionysios Stefanakis, Takuma Kobayashi, Hajime Tanaka. Physics and Innovative Technologies in SiC Power Devices. 2021 IEEE International Electron Devices Meeting (IEDM). 2022. 36-1-1-36-1-4
Tsunenobu Kimoto, Hiroki Niwa, Naoki Kaji, Takuma Kobayashi, Ying Zhao, Seigo Mori, Masatoshi Aketa. Progress and future challenges of SiC power devices and process technology. 2017 IEEE International Electron Devices Meeting (IEDM). 2018. 9.5.1-9.5.4

ｍore...

Patents (5)：

Books (1)：

Lectures and oral presentations (164)：

Reduction of hole traps in SiO2/GaN MOS structures by properly designing the oxide interlayer
(12th International Workshop on Nitride Semiconductors (IWN 2024) 2024)
Investigation of oxygen-related defects in 4H-SiC from ab initio calculations
(the 2024 International Conference on Silicon Carbide and Related Materials (ICSCRM 2024) 2024)
Control over the density of single photon emitters at SiO_2/SiC interfaces: CO_2 vs. Ar annealing
(the 2024 International Conference on Silicon Carbide and Related Materials (ICSCRM 2024) 2024)
Suppression of luminescent spots at SiO_2/SiC interfaces by thermal oxidation at low oxygen partial pressure
(the 2024 International Conference on Silicon Carbide and Related Materials (ICSCRM 2024) 2024)
Insight into the mobility-limiting factors of SiC MOSFETs: the impact of gate bias stress
(the 2024 International Conference on Silicon Carbide and Related Materials (ICSCRM 2024) 2024)

ｍore...

Education (3)：

2015 - 2018 Kyoto University Graduate School of Engineering Ph.D. Student, Department of Electronic Science and Engineering
2013 - 2015 Kyoto University Graduate School of Engineering Master's Student, Department of Electronic Science and Engineering
2009 - 2013 Osaka University School of Engineering Science Undergraduate, Department of Electronics and Materials Physics

Professional career (1)：

Work history (9)：

2024/04 - 現在 Osaka University Graduate School of Engineering Associate Professor
2023/04 - 現在 Osaka University CFi, Graduate School of Engineering Expert Leaders of Next Generation
2022/10 - 現在 JST PRESTO [Information Carriers] Researcher
2021/01 - 2024/03 Osaka University Graduate School of Engineering Assistant Professor
2019/10 - 2020/12 FAU Erlangen-Nürnberg Department Physik JSPS Overseas Research Fellow

Show all

Committee career (2)：

2024/07 - 現在 ICSCRM2026 実行準備委員会委員
2024/04 - 現在 Advanced Power Semiconductors, The Japan Society of Applied Physics Treasurer [Permanent Member]

Awards (7)：

2023/12 - The 12th NF Foundation R&D Encouragement Award "Excellence Award"
2023/05 - The 22nd Funai Information Technology Award for Young Researchers
2022/03 - The 43rd JSAP Young Scientist Award
2015/11 - Research Encouragement Award, 2nd Meeting on Advanced Power Semiconductor, The Japan Society of Applied Physics
2015/01 - 発表奨励賞, 第294回電気材料技術懇談会若手研究発表会

Show all

Association Membership(s) (4)：

SAKIGAKEクラブ(大阪大学) , Advanced Power Semiconductors Division, The Japan Society of Applied Physics , The Japan Society of Applied Physics , IEEE

※ Researcher’s information displayed in J-GLOBAL is based on the information registered in researchmap. For details, see here.

Return to Previous Page