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J-GLOBAL ID：202102210403979091   Reference number：21A0154895

Effect of crystallization of Ni catalyst on direct precipitation of multilayer graphene using W capping layer

Wキャッピング層を用いた多層グラフェンの直接析出に及ぼすNi触媒の結晶化の影響【JST・京大機械翻訳】

Author (7)： Yamada Jumpei (Department of Materials Science and Engineering, Meijo University, Nagoya 468-8502, Japan) ,  Ueda Yuki (Department of Materials Science and Engineering, Meijo University, Nagoya 468-8502, Japan) ,  Maruyama Takahiro (Department of Applied Chemistry, Meijo University, Nagoya 468-8502, Japan) ,  Fujikawa Seiji (National Institute for Quantum and Radiological Science and Technology (QST), Hyogo 679-5148, Japan) ,  Sasaki Takuo (National Institute for Quantum and Radiological Science and Technology (QST), Hyogo 679-5148, Japan) ,  Takahasi Masamitu (National Institute for Quantum and Radiological Science and Technology (QST), Hyogo 679-5148, Japan) ,  Naritsuka Shigeya (Department of Materials Science and Engineering, Meijo University, Nagoya 468-8502, Japan)
Material： Journal of Crystal Growth  (J Cryst Growth)
Volume： 555  Page： Null  Publication year： 2021 
JST Material Number： B0942A  ISSN： 0022-0248  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Abstract/Point： In recent years, graphene grow...

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Thesaurus term： *crystallization ,  optimization ,  single crystal ,  *Nickel ,  crystallinity ,  cooling velocity ,  *graphene ,  annealing temperature ,  sapphire substrate ,  amorphous carbon ,  *multilayer graphene ,  modification
Semi thesaurus term： *キャップ層 , 【Automatic Indexing@JST】

Author keywords (4)： A1. Growth models ,  A1. Recrystallization ,  A3. Solid phase epitaxy ,  B1. Nanomaterials

JST classification (1)： Semiconductor thin films  (BK14040E)

Terms in the title (6)： キャッピング層 ,  多層グラフェン ,  析出 ,  Ni ,  触媒 ,  結晶化