Art
J-GLOBAL ID：202102219158532823
Reference number：21A0187670
Power regenerative continuous switching test system for power devices
パワーデバイスを対象とした電力回生型連続スイッチング試験装置
Author (2)：
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Material：
Issue：
EDD-20-050-064/SPC-20-200-214 電子デバイス研究会/半導体電力変換研究会
Page：
69-74
Publication year：
Dec. 21, 2020
JST Material Number：
Z0924B
Document type：
Proceedings
Article type：
原著論文
Country of issue：
Japan (JPN)
Language：
JAPANESE (JA)
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Semi thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Methods and instruments for measuring other electromagnetic quantities
, Measurement,testing and reliability of solid-state devices
Reference (13)：
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X. Jiang, J. Wang, J. Chen, H. Yu, Z. Li, and Z. J. Shen, ′′Investigation on Degradation of SiC MOSFET under Accelerated Stress in PFC Converter,′′ IEEE Journal of Emerging and Selected Topics in Power Electronics, Early Access, 2020.
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A. Fayyaz and A. Castellazzi, ′′High temperature pulsed-gate robustness testing of SiC power MOSFETs,′′ Microelectronics Reliability, vol. 55, no. 9-10, pp. 1724-1728, 2015.
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J. O. Gonzalez and O. Alatise, ′′Bias temperature instability and condition monitoring in SiC power MOSFETs,′′ Microelectronics Reliability, vol. 88-90, pp. 557-562, 2018.
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Y. Mori, D. Hisamoto, N. Tega, M. Matsumura, H. Yoshimoto, A. Shima, and Y. Shimamoto, ′′Effects of interface properties in SiC MOSFETs on reliability,′′ in Proc. 2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, Hsinchu, Taiwan, Jun. 2015.
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′′Semiconductor devices Mechanical and climatic test methods- Part 23: High temperature operating life,′′ International Electrotechnical Commission, IEC 60749-23, Edition 1.1, 2011.
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