Art

J-GLOBAL ID：202102238975536011   Reference number：21A0463198

Tailoring of carrier concentration and engineering of band gap for Sn-doped In₂O₃ films by postirradiation of negatively charged oxygen ions

負に帯電した酸素イオンの照射後のSnドープIn_2O_3膜のキャリア濃度とバンドギャップのエンジニアリングの調整【JST・京大機械翻訳】

Author (6)： Furubayashi Yutaka (Materials Design Center, Research Institute, Kochi University of Technology, 185 Tosayamadacho-Miyanokuchi, Kami 782-8502, Japan) ,  Maehara Makoto (Industrial Equipment Division, Sumitomo Heavy Industries, Ltd, 5-2 Soubiraki-cho, Niihama 792-8588, Japan) ,  Kitami Hisashi (Materials Design Center, Research Institute, Kochi University of Technology, 185 Tosayamadacho-Miyanokuchi, Kami 782-8502, Japan) ,  Kitami Hisashi (Technology Research Center, Sumitomo Heavy Industries, Ltd, 19 Natsushimacho, Yokosuka 237-8555, Japan) ,  Sakemi Toshiyuki (Technology Research Center, Sumitomo Heavy Industries, Ltd, 19 Natsushimacho, Yokosuka 237-8555, Japan) ,  Yamamoto Tetsuya (Materials Design Center, Research Institute, Kochi University of Technology, 185 Tosayamadacho-Miyanokuchi, Kami 782-8502, Japan)
Material： Journal of Physics. D. Applied Physics  (J Phys D)
Volume： 54  Issue： 14  Page： 145110 (12pp)  Publication year： 2021 
JST Material Number： B0092B  ISSN： 0022-3727  CODEN： JPAPBE  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Abstract/Point： We demonstrate that the state-...

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Thesaurus term： arc discharge ,  crystal structure ,  electrical resistivity ,  *tin ,  polycrystal ,  *doping ,  criticality ,  direct current ,  *carrier density ,  valence band ,  degeneracy ,  dopant ,  optical gap ,  *band gap ,  *oxygen ion

JST classification (2)： Visible and ultraviolet spectra of inorganic compounds  (BM08084P) ,  Electric conduction in other inorganic compounds  (BM03044O)

Terms in the title (7)： 帯電 ,  酸素イオン ,  Sn ,  ドープ ,  キャリア濃度 ,  バンドギャップ ,  エンジニアリング