Art
J-GLOBAL ID:202102252474611219   Reference number:21A0832671

A Low-Power Scan Driver Using a-IGZO TFTs for 10-in. WQXGA AMFPDs

10インチWQXGA AMFPDsの為のa-IGZO TFTを使用した低電力スキャンドライバ
Author (5):
Material:
Volume: 20th  Page: ROMBUNNO.DES6-2  Publication year: Dec. 03, 2013 
JST Material Number: L4269B  ISSN: 1883-2504  Document type: Proceedings
Article type: 短報  Country of issue: Japan (JPN)  Language: ENGLISH (EN)
Thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.

Semi thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.

JST classification (2):
JST classification
Category name(code) classified by JST.
Other electronic circuits  ,  Transistors 
Reference (13):
  • M. J. Seok, M. H. Choi, M. Mativenga, D. Geng, D. H. Kang, and J. Jang, “A full-swing a-IGZO TFT-based inverter with a top gate-bias-induced depletion load,” IEEE Electron Dev. Letts., Vol. 32, No. 8, pp. 1089-1091 (2011).
  • J.K. Jeong, J.H. Jeong, H.W. Yang, J.S. Park, Y.G. Mo, and H.D. Kim, “High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel,” Appl. Phys. Lett., Vol 91, No. 11, pp. 113505_1-113505_3 (2007).
  • H. Yabuta, M. Sano, K. Abe, T. Aiba, T. Den, and H. Kumomi, “High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering,” Appl. Phys. Lett., Vol 89, No. 11, pp. 112123_1-112123_3 (2006).
  • M. J. Gadre and T. L. Alford, “Highest transmittance and high-mobility amorphous indium gallium zinc oxide films on flexible substrate by room temperature deposition and post-deposition anneals,” Appl. Phys. Lett., Vol 99, No. 5, pp. 051901_1-051901_3 (2011).
  • D.C. Look, G.C. Farlow, P. Reunchan, S. Limpijumnong, S.B. Zhang, and K. Nordlund, “Evidence for native-defect donors in n-type ZnO,” Phys. Rev. Lett., Vol 95, No. 22, pp. 225502_1-225502_4 (2005).
more...
Terms in the title (5):
Terms in the title
Keywords automatically extracted from the title.

Return to Previous Page