Art
J-GLOBAL ID:202102287778005094
Reference number:21A0417455
High-Frequency and High-Efficiency Design of GaN-Based Non-Inverting Buck-Boost Converter
GaNベースの非反転バックブーストコンバータの高周波高効率設計
Author (3):
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Material:
Issue:
SPC-21-029-044/MD-21-029-044 半導体電力変換研究会/モータドライブ研究会
Page:
75-80
Publication year:
Jan. 18, 2021
JST Material Number:
Z0924B
Document type:
Proceedings
Article type:
原著論文
Country of issue:
Japan (JPN)
Language:
ENGLISH (EN)
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Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
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JST classification (1):
JST classification
Category name(code) classified by JST.
Power converters
Reference (11):
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N. Ertugrul and D. Abbott: “DC is the Future [Point of View]”, Proceedings of the IEEE, Vol. 108, No.5, pp. 615-624 (2020).
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R. S. Pengelly, S. M. Wood, J. W. Milligan, S. T. Sheppard, and W. L. Pribble: “A review of GaN on SiC high electron-mobility power transistors and MMICs”, IEEE Transactions on Microwave Theory and Techniques, Vol. 60, No.6 PART 2, pp.1764-1783 (2012).
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A. Lidow, M. de Rooij, J. Strydom, D. Reusch, and J. Glaser: GaN Transistors for Efficient Power Conversion, Second Edition, pp.1-18, Wiley (2014).
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X. Ren, S. Member, X. Ruan, S. Member, H. Qian, M. Li, and Q. Chen: “Three-Mode Dual-Frequency Two-Edge Modulation Scheme for Four-Switch Buck Boost Converter”, IEEE TRANSACTIONS ON POWER ELECTRONICS, Vol. 24, No.2, pp.499-509 (2009).
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Y. Qin, S. Li, and S. Y. Hui: “Topology-Transition Control for Wide-Input-Voltage-Range Efficiency Improvement and Fast Current Regulation in Automotive LED Applications”, IEEE Transactions on Industrial Electronics, Vol. 64, No.7, pp.5883-5893 (2017).
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