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J-GLOBAL ID：202201006732398227   Update date: Aug. 31, 2024

Maeda Takuya

マエダ タクヤ | Maeda Takuya
Affiliation and department：
The University of Tokyo The Graduate School of Engineering Department of Electrical Engineering and Information Systems

About The University of Tokyo The Graduate School of Engineering Department of Electrical Engineering and Information Systems


Job title： Lecturer/Assistant Professor
Homepage URL  (1)： https://scholar.google.co.jp/citations?user=5O-kAOMAAAAJ&hl=ja&oi=ao
Research field  (2)： Electric/electronic material engineering ,  Thin-film surfaces and interfaces
Research keywords  (10)： Wide Bandgap Semiconductor ,  Gallium Nitride (GaN) ,  Aluminum Nitride (AlN) ,  Power Device ,  High Frequency (RF) Device ,  高電界物性 ,  Avalanche Breakdown ,  ドリフト速度 ,  Schottky Junction ,  p-n Junction
Research theme for competitive and other funds  (16)：
  • 2024 - 2031 新奇窒化物半導体ヘテロ接合による二次元電子の制御とデバイス応用
  • 2023 - 2027 Functional Extension of Nitride Semiconductors by Epitaxial Integration of Novel Materials
  • 2023 - 2027 In situ three-dimensional measurement of wide bandgap semiconductors with stimulated Raman scattering
  • 2023 - 2025 Measurement of Electron Drift Velocity in GaN under High Electric Field
  • 2022 - 2025 Demonstration of Novel Transistor Based on Ferroelectric/Nitride Semiconductor Heterostructure
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Papers (26)：
  • Chandrashekhar Savant, Ved Gund, Kazuki Nomoto, Takuya Maeda, Shubham Jadhav, Joongwon Lee, Madhav Ramesh, Eungkyun Kim, Thai-Son Nguyen, Yu-Hsin Chen, et al. Ferroelectric AlBN films by molecular beam epitaxy. Applied Physics Letters. 2024. 125. 7. 072902
  • Takuya Maeda, Yusuke Wakamoto, Shota Kaneki, Hajime Fujikura, Atsushi Kobayashi. Structural and optical properties of epitaxial ScxAl1-xN coherently grown on GaN bulk substrates by sputtering method. Applied Physics Letters. 2024. 125. 2. 022103
  • Atsushi Kobayashi, Yoshio Honda, Takuya Maeda, Tomoya Okuda, Kohei Ueno, Hiroshi Fujioka. Structural characterization of epitaxial ScAlN films grown on GaN by low-temperature sputtering. Applied Physics Express. 2023. 17. 1. 011002-011002
  • Joseph Casamento, Kazuki Nomoto, Thai-Son Nguyen, Hyunjea Lee, Chandrasekhar Savant, Lei Li, Austin Hickman, Takuya Maeda, Yu-Tsun Shao, Jimy Encomendero, et al. AlScN High Electron Mobility Transistors: Integrating High Piezoelectric, High K Dielectric, and Ferroelectric Functionality. 2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS). 2023
  • A. Kobayashi, S. Kihira, T. Akiyama, T. Kawamura, T. Maeda, K.Ueno, H. Fujioka. Epitaxial Junction of Inversion Symmetry Breaking AlN and Centrosymmetric NbN: A Polarity Control of Wide-Bandgap AlN. ACS Applied Electronic Materials. 2023
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Lectures and oral presentations  (52)：
  • Barrier Height Inhomogeneity in Si-doped AlN Schottky Barrier Diodes on SiC substrates
    (International Workshop on Nitride Semiconductors (IWN 2024) 2024)
  • Drift Velocity of 2DEG in AlGaN/GaN in Ultrawide Temperature Range from 25 K to 573 K
    (International Workshop on Nitride Semiconductors (IWN 2024) 2024)
  • Characterization of ScAlN/GaN Toward Electronic Device Application
    (2024 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS 2024) 2024)
  • Sputter Epitaxy of Transition Metal Nitrides on Nitride Semiconductors
    (The 2024 Fall Meeting of the European Materials Research Society (E-MRS 2024) 2024)
  • Analysis of Chapacitance-Frequency Characteristics of Si-doped AlN Schottky Junction
    (The 2024 Fall Meeting of the European Materials Research Society (E-MRS 2024) 2024)
ｍore...
Education (4)：
  • 2018 - 2020 Kyoto University
  • 2016 - 2018 京都大学 大学院 工学研究科 電子工学専攻 (修士課程)
  • 2012 - 2016 京都大学 工学部 電気電子工学科
  • 2009 - 2012 大阪府立大手前高等学校 理数科
Professional career (3)：
  • PhD in Engineering (Kyoto University)
  • Master of Engineering (Kyoto University)
  • Bachelor of Engineering (Kyoto University)
Work history (8)：
  • 2024/10 - 現在 科学技術振興機構(JST) 創発的研究支援事業
  • 2023/10 - 現在 The University of Tokyo Lecturer/Assistant Professor
  • 2022/10 - 現在 科学技術振興機構(JST) 創造的研究推進事業(ACT-X)
  • 2022/04 - 2023/09 The University of Tokyo The Graduate School of Engineering Department of Electrical Engineering and Information Systems Assistant Professor
  • 2020/07 - 2022/03 Cornell University Department of Electrical & Computer Engineering (ECE) Kavli Institute at Cornell for nanoscale science, postdoctoral research fellow
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Committee career (9)：
  • 2024/05 - 現在 ナノ構造・エピタキシャル成長分科会 幹事会
  • 2024/05 - 現在 電子情報通信学会 電子デバイス(ED)研究会専門委員会
  • 2024/08 - 2027/07 The 83rd-85th Device Research Conference (DRC) Technical Program Committee
  • 2023/10 - 2025/03 European Materials Research Society (E-MRS 2024) Organizing Committee of III-N Symposium
  • 2023/04 - 2025/03 The 69th/70th International Electron Device Meetings (IEDM) Sub-committee, Power, Microwave/Mm-Wave and Analog Devices/Systems (PMA) area
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Awards (14)：
  • 2023/06 - 第15回ナノ構造エピタキシャル成長講演会 研究奨励賞
  • 2023/02 - The 39th Inoue Research Award for Young Researcher
  • 2020/03 - 令和元年 京都大学総長賞
  • 2020/02 - The 18th IEEE EDS Japan Joint Chapter Student Award (IEDM 2019)
  • 2019/09 - 第41回応用物理学会 論文奨励賞
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Association Membership(s) (2)：
IEEE ,  応用物理学会
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