Rchr
J-GLOBAL ID：202201017244251340
Update date: May. 07, 2025
Gake Tomoya
ガケ トモヤ | Gake Tomoya
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Research theme for competitive and other funds (1)：
2020 - 2023 第一原理計算に基づいたp型半導体材料の設計と探索
Papers (10)：
Teruya Nagafuji, Koshiro Osuna, Kota Hanzawa, Tomoya Gake, Soungmin Bae, Zhongxu Hu, Takayoshi Katase, Akira Takahashi, Hidenori Hiramatsu, Fumiyasu Oba. Carrier generation and compensation mechanism in La2SnO2S3. Journal of Materials Chemistry C. 2024. 12. 31. 12015-12025
Yasuhide Mochizuki, Ha-Jun Sung, Tomoya Gake, Fumiyasu Oba. Chemical Trends of Surface Reconstruction and Band Positions of Nonmetallic Perovskite Oxides from First Principles. Chemistry of Materials. 2023. 35. 5. 2047-2057
Tomoya Gake, Yu Kumagai, Akira Takahashi, Hidenori Hiramatsu, Fumiyasu Oba. Defect formation and carrier compensation in layered oxychalcogenide La2CdO2Se2: an insight from first principles. Journal of Materials Chemistry C. 2022. 10. 44. 16828-16837
Tomoya Gake, Yu Kumagai, Akira Takahashi, Fumiyasu Oba. Point defects in p-type transparent conductive CuMO2 (M = Al, Ga, In) from first principles. Physical Review Materials. 2021. 5. 10. 104602
Tomoya Gake, Yu Kumagai, Christoph Freysoldt, Fumiyasu Oba. Finite-size corrections for defect-involving vertical transitions in supercell calculations. Physical Review B. 2020. 101. 2. 020102
ｍore...
Patents (1)：
4元系酸カルコゲン化物および電子素子
Professional career (1)：
Ph. D. (Tokyo Institute of Technology)
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