21.5dBm Power-Handling 5GHz Transmit/Receive CMOS Switch Realized by Voltage Division Effect of Stacked Transistor Configuration with Depletion-Layer-Extended Transistors(DETs).

OHNAKADO T; YAMAKAWA S; MURAKAMI T; FURUKAWA A; TANIGUCHI E; UEDA H; SUEMATSU N; OOMORI T

Art

J-GLOBAL ID：200902230116684125 Reference number：03A0656863

21.5dBm Power-Handling 5GHz Transmit/Receive CMOS Switch Realized by Voltage Division Effect of Stacked Transistor Configuration with Depletion-Layer-Extended Transistors(DETs).

空乏層拡張トランジスタ(DET)を持つスタックトランジスタ配置の電圧分割効果により実現した21.5dBm電力操作5GHz送信/受信CMOSスイッチ

Publisher site Copy service {{ this.onShowCLink("http://jdream3.com/copy/?sid=JGLOBAL&noSystem=1&documentNoArray=03A0656863&COPY=1") }}
Access JDreamⅢ for advanced search and analysis. {{ this.onShowJLink("http://jdream3.com/lp/jglobal/index.html?docNo=03A0656863&from=J-GLOBAL&jstjournalNo=W0767A") }}

Author (8)： , , , , , , ,
Material：
Volume： 2003 Page： 25-28 Publication year： 2003
JST Material Number： W0767A ISSN： 2158-5601 Document type： Proceedings
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

,...
,...

To see more with JDream III (charged). {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=03A0656863&from=J-GLOBAL&jstjournalNo=W0767A") }}

Semiconductor integrated circuit , Other transmission circuit elements

, , , , , ,

Return to Previous Page