Research field (3)：
Electric/electronic material engineering
, Crystal engineering
, Applied materials
Research keywords (4)：
電子・電気材料工学
, 応用物性・結晶工学
, Electronic and Electric Materials Engineering
, Applied Physics of Property and Crystallography
Research theme for competitive and other funds (54)：
2023 - 2028 New development of Semiconductors Intracenter Photonics
2018 - 2023 Development of semiconductors intra-center photonics
2017 - 2019 Cell-photon engineering with ultra-narrow-band LEDs
2017 - 2019 Photon-field control of luminescent function of rare-earth ions in semiconductors
2016 - 2018 Development of highly efficient wavelength-conversion materials for next-generation solar cells using rare-earth ions doped in semiconductors
2014 - 2017 Approaches to 10 times intensification of rare-earth doped materials: Identification of luminescence quenching factors using microwave absorption properties
2012 - 2017 Development of bright red light-emitting devices by elucidation and control of light-emitting mechanism in rare-earth-doped nitride semiconductors
2014 - 2016 Development of quantum informative function using rare-earth ions doped well-controllably in semiconductors
2012 - 2013 赤色発光を示す希土類添加窒化物半導体におけるエネルギー輸送機構の解明
2011 - 2012 Development of terahertz emitters and detectors using rare-earth-doped semiconductors
2007 - 2011 Development of Properties and Functionalities by Precise Control of Rare-Earth Doping
2006 - 2010 Reproducible growth technique for GaInNAs and its application to long-wavelength laser diodes
2008 - 2008 Development of advanced luminescent functionality by control of atomic configuration in rare-earth doped semiconductors
2004 - 2006 Development of laser terahertz emission microscope and its application to LSI defect analysis
2004 - 2005 希土類元素添加半導体の新展開:秩序制御による新しいスピン物性の発現
2003 - 2005 Investigation for improved performance of new-type extremely-stable-wavelength light-emitting devices based on rare-earth-doped III-V semiconductors
2003 - 2004 希土類元素添加半導体における電流励起光学利得とその最適化
2003 - 2003 希土類元素添加半導体の新展開:秩序制御による新しいスピン物性の発現
2002 - 2003 Distributions of impurity atoms in semiconductors analyzed by X-ray CTR scattering measurement
2001 - 2003 Fabrication of Semiconductor Light Amplifier using Ultra-High Co-Doping of Er and O
2001 - 2003 Materials for new semiconductor lasers; atomically-controlled, growth of rare-earth-doped III-V semiconductors with high quality
Characterization of Quantum-Functional Materials and Their Application to Electronic Devices
Atomic-Layer Controlled Heteroepitaxy of New Quantum-Functional Materials
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Papers (371)：
Takenori Iwaya, Shuhei Ichikawa, Volkmar Dierolf, Brandon Mitchell, Hayley Austin, Dolf Timmerman, Jun Tatebayashi, Yasufumi Fujiwara. An efficiently excited Eu3+ luminescent site formed in Eu,O-codoped GaN. AIP Advances. 2024. 14. 2
Zhidong Fang, Jun Tatebayashi, Ryohei Homi, Masayuki Ogawa, Hirotake Kajii, Masahiko Kondow, Kyoko Kitamura, Brandon Mitchell, Shuhei Ichikawa, Yasufumi Fujiwara. Enhancement of Er luminescence from bridge-type photonic crystal nanocavities with Er, O-co-doped GaAs. Optics Continuum. 2023. 2. 10. 2178-2178
Ryosuke Noro, Mariko Adachi, Yasufumi Fujiwara, Masahiro Uemukai, Tomoyuki Tanikawa, Ryuji Katayama. Fabrication of polarity inverted LiNbO3/GaN channel waveguide by surface activated bonding for high-efficiency transverse quasi-phase-matched wavelength conversion. Japanese Journal of Applied Physics. 2023. 62. 10. 102001-102001
Jun Tatebayashi, Takaya Otabara, Takuma Yoshimura, Raiki Hada, Ryo Yoshida, Shuhei Ichikawa, Yasufumi Fujiwara. Formation and Optical Characteristics of GaN:Eu/GaN Nanowires for Applications in Light-Emitting Diodes. ECS Journal of Solid State Science and Technology. 2023
T. Taniguchi, D. Timmerman, S. Ichikawa, J. Tatebayashi, Y. Fujiwara. Electrically driven europium-doped GaN microdisk. Optics Letters. 2023. 48. 17. 4590-4590
"Extremely large Er excitation cross section in Er,O-codoped GaAs light emitting diodes grown by organometallic vapor phase epitaxy"
Materials Research Society Symposium Proceedings, Progress in Semiconductors II--Electronic and Optoelectronic Applications 2003
"ESR study of heavily doped GaAs:Er grown by organometallic vapor phase epitaxy"
EPR in the 21st Century: Basics and Applications to Material, Life and Earth Sciences 2002
"Organometallic vapor phase and droplet heteroepitaxy of quantum structur"
InP and Related Compounds -Materials, Applications and Devices-, Optoelectronic Properties of Semiconductors and Superlattices 2000
"Growth condition dependences of optical properties of Er in InP and local structures"
InP and Related Compounds -Materials, Applications and Devices-, Optoelectronic Properties of Semiconductors and Superlattices 2000
"Formation of InGaAs Dots on InP Substrate with Lattice-Matching Growth Condition by Droplet Heteroepitaxy"
Institute of Physics Conference Series 1999
Enhanced Eu luminescence in GaN: Eu,O-based light emitting diodes via introduction of nanostructures and nanocavities
(Proceedings of AM-FPD 2020 - 27th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials 2020)
Evaluations of Selective Dry Etching of GaAs Core Layer having Embedded InAs Quantum Dots Using Optical Measurements towards Photonic Crystal Laser Fabrication
(2020 27th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) 2020)
Characterization of Epitaxial Si Films Grown at Low Temperatures by Atmospheric Pressure Plasma Chemical Vapor Deposition
(Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, pp.69-70, Osaka, Japan. 2006)
Photoluminescence properties of ion-beam synthesized b-FeSi2/Si interface [Invited Talk]
(Proceedings of the International Workshop on Sustainable Energy and Materials (Tokyo, Japan, September 5, 2006) pp. 3-39-3-42. 2006)
Characterization of Epitaxial Silicon Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition at Low Temperatures(450-600°C)
(Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials, Yokohama, 2006, pp.1094-1095. 2006)
1983 - 1985 Osaka University Graduate School of Engineering Sciencel
1981 - 1983 Osaka University
1977 - 1981 Osaka University School of Engineering Science Direct Affiliates
Professional career (1)：
Dr. Engineering (Osaka University)
Work history (15)：
2022/04 - 現在 Osaka University R3 Institute of Newly-Emerging Science Design Director
2003/07 - 現在 Osaka University Graduate School of Engineering Professor
2017/04 - 2022/03 Osaka University Institute for Nanoscience Design Directer
2019/10 - 2020/03 Tottori University Graduate School of Engineering Part-time Lecturer
2015/08 - 2016/08 Osaka University
2006/04 - 2011/03 Tokyo University of Science Guest Professor
2008/10 - 2009/03 Kyoto University Graduate School of Engineering Part-time Lecturer
2006/04 - 2009/03 Osaka Kyoiku University Department of Arts and Sciences Part-time Lecturer
2007/10 - 2008/03 Kyoto University Graduate School of Engineering Part-time Lecturer
2003/07 - 2004/03 Nagoya University Graduate School of Engineering Part-time Lecturer
1997/04 - 2003/06 Nagoya University Graduate School of Engineering Associate Professor
1993/04 - 1997/03 Nagoya University School of Engineering Associate Professor
1995/11 - 1996/01 University of Illinois at Urbana-Champaign Materials Research Laboratory and Department of Electrical and Computer Engineering Visiting Associate Professor
1991/01 - 1993/03 Osaka University School of Engineering Science Lecturer
1985/08 - 1991/01 Osaka University School of Engineering Science Research Associate
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Committee career (5)：
2020/03 - 2022/03 Japan Society of Applied Physics Vice President
2009 - (社)日本金属学会 セミナー・シンポジウム委員会委員
2008 - (社)日本材料学会 学会将来構想WGメンバー
2007 - (社)日本金属学会 分科会委員会委員
2004 - Japanese Journal of Applied Physics 編集委員
Awards (17)：
2021/12 - International Display Workshop 2021 (IDW'21) Best Paper Award Eu-Doped GaN-Based Red LEDs as a Key Technology for Micro-LED Displays with Ultrahigh Resolution
2002/03 - The NAGAI Foundation for Science and Technology Academic Prize, The NAGAI Foundation for Science and Technology
1981/03 - 大阪大学 楠本賞
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Association Membership(s) (5)：
The Society of Materials Science, Japan
, The Japan Institute of Metals and Materials
, The Japanese Society of Applied Physics
, The Rare Earth Society of Japan
, The Laser Society of Japan
