Rchr
J-GLOBAL ID：200901004713558072
Update date: Oct. 26, 2021
Nagaoka Shiro
ナガオカ シロウ | Nagaoka Shiro
Affiliation and department：
Job title：
Professor
Homepage URL (1)：
http://www.de.takuma-ct.ac.jp
Research field (2)：
Electronic devices and equipment
, Electric/electronic material engineering
Research keywords (3)：
電子デバイス・集積回路
, 製作・評価技術
, Fabrication and Evaluation Technology
Research theme for competitive and other funds (4)：
- 2004 - 電子線リソグラフィーによる微細加工に関する研究
- 2004 - A Study of nano fabrication using ]EB lithography
- 2000 - プラズマCVDによる機能薄膜の作製と評価
- A Study of Functional Thin Films fablicated by Plasma CVD Method
Papers (16)：
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長岡 史郎. 簡略化した行程を使ったMOS電界効果トランジスタ作製実験教材の開発. 工学教育論文集,Vol.64,No.6,pp127-130. 2016
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長岡 史郎. Graphical Representaiton and Origin of Piezoresistance Effect in Germanium. Proceedings of the International Conference on the Physics of Semiconductors(ICPS 2016). 2016
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長岡 史郎. A Feasibility Study of the Selective and Simultaneous Thermal Impurity Diffusion Processes on the Silicon Substrate. Proceedings of the 6th International Symposium on Technology Sustainability (ISTS 2016). 2016
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長岡 史郎. A Study of the Simplified IC FAB for the Science and Technical Education. Proceedings of the 6th International Symposium on Technology Sustainability (ISTS 2016). 2016
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長岡 史郎. A Proposal of the Simplified IC FAB Establishied in the Average Science Laboratory for Cultivation Scientific Mind. Proceedings of the 10th International Symposium on Advances in Technology Education(ISATE 2016). 2016
ｍore...
MISC (29)：
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長岡 史郎. 窒化シリコン薄膜を用いた超微細デバイス用基板の作製~電子線リソグラフィで実現するレジストパタンの高解像度化とその応用~. 文部科学省ナノテク路のジープラットフォーム事業 微細加工プラットフォーム第2回広島大学・山口大学・香川大学・FAIS合同シンポジウム、. 2017
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長岡 史郎. A Feasibility Study of the Selective and Simultaneous Thermal Impurity Diffusion Processes on the Silicon Substrate. The 6th International Symposium on Technology Sustainability (ISTS 2016). 2016
-
長岡 史郎. A Study of the Simplified IC FAB for the Science and Technical Education. The 6th International Symposium on Technology Sustainability (ISTS 2016). 2016
-
長岡 史郎. A Proposal of the Simplified IC FAB Establishied in the Average Science Laboratory for Cultivation Scientific Mind. The 10th International Symposium on Advances in Technology Education(ISATE 2016). 2016
-
長岡 史郎. Graphical Representaiton and Origin of Piezoresistance Effect in Germanium. The International Conference on the Physics of Semiconductors(ICPS 2016). 2016
ｍore...
Patents (2)：
-
ネガ型レジストの現像方法
-
no Result Patent Name
Education (4)：
- - 1991 Nagaoka University of Technology
- - 1991 Nagaoka University of Technology Graduate School, Division of Engineering
- - 1983 Nagaoka University of Technology Faculty of Engineering
- - 1983 Nagaoka University of Technology Faculty of Engineering
Professional career (1)：
- Dr. of Engineering (Nagaoka University of Technology)
Work history (2)：
- 1983 - 1997 東ソー(株)新材料研究所
- 1983 - 1997 TOSOH Corporation Advanced Material Research Laboratory
Association Membership(s) (2)：
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