Rchr
J-GLOBAL ID：200901016267449505   Update date: Sep. 27, 2009

Takeda Hiroshi

タケダ ヒロシ | Takeda Hiroshi
Affiliation and department：
NEC Electronics Corporation LSI Funamental Research Laboratory

About NEC Electronics Corporation LSI Funamental Research Laboratory


Job title： Researcher
Research field  (2)： Electronic devices and equipment ,  Electric/electronic material engineering
Research keywords  (2)： 半導体 ,  semiconductor
Research theme for competitive and other funds  (2)：
  • 2002 - 2005 量子構造素子におけるキャリア輸送現象の解析に関する研究
  • -
MISC (6)：
  • Study of electron transport in SOI MOSFETs using Monte Carlo technique with full-band modeling. Journal of Computational Electronics. 2002. vol. 1, pp. 467-474
  • Full-band Monte Carlo simulation of two-dimensional electron gas in SOI MOSFETs. Journal of Computational Electronics. 2002. 1, pp219
  • Self-consistent calculation of two-dimensional electronic states in SOI-MOSFETs using full-band modeling. Pysica B. 2002. 314, pp377
  • Study of electron transport in SOI MOSFETs using Monte Carlo technique with full-band modeling. Journal of Computational Electronics. 2002. vol. 1, pp. 467-474
  • Full-band Monte Carlo simulation of two-dimensional electron gas in SOI MOSFETs. Journal of Computational Electronics. 2002. 1, pp219
ｍore...
Professional career (1)：
  • Master(engineering) (Osaka University)
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